Allicdata Part #: | UGB8AT-E3/81-ND |
Manufacturer Part#: |
UGB8AT-E3/81 |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 8A TO263AB |
More Detail: | Diode Standard 50V 8A Surface Mount TO-263AB |
DataSheet: | UGB8AT-E3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.47358 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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UGB8AT-E3/81 application field and working principleDiodes are an essential part of any electrical circuit, being able to control the direction and flow of current through them. UGB8AT-E3/81 is an epitaxial planar PN junction rectifier, produced by German company Wuerth Elektronik. It is a single-phase diode designed for power applications, due to its high current handling capacity and low forward voltage drop. It is a through-hole type device, meaning it needs to be mounted onto a printed circuit board or other supporting device to be used.
UGB8AT-E3/81 can handle up to 8A of continuous forward current with a peak of 10A and has a reverse voltage rating of up to 800V. It has a forward voltage drop of just 0.8V at 8A; this is significantly lower than conventional rectifier diode types, making it more suitable for high efficiency power conversions. The device is also integrated with a Thermo Fuse Cutoff (TFC), which limits the temperature of the diode to 135°C, protecting it from thermal overloading.
The working principle of UGB8AT-E3/81 is fairly straightforward. In its forward-bias configuration, the current flows from the anode to the cathode. When connected this way, the device offers a low resistance path for current to flow, allowing it to dissipate only 0.8V at 8A. In its reverse-bias state, the diode exhibits a very high resistance, blocking the flow of current. This ensures that no current can flow in an unintended direction and thus protects sensitive components.
UGB8AT-E3/81 is a suitable choice for power supplies, SMPS (switched mode power supplies), AC-DC and DC-DC converters. It is also used in battery chargers, power switch circuits, line filters, overvoltage protection and solar inverters. Thanks to its low forward voltage drop and high current handling capability, it is an ideal choice for high efficiency, space-saving and cost-effective designs.
Overall, UGB8AT-E3/81 is an efficient and reliable rectifier diode with versatile application fields. Its low forward voltage drop, high current handling capacity, integrated TFC and ease of use make it a popular choice amongst engineers looking for a reliable and cost-effective power solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UGB8CT-E3/45 | Vishay Semic... | 0.41 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/45 | Vishay Semic... | 0.92 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/45 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/45 | Vishay Semic... | 0.44 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8FT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8JT-E3/45 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8HTHE3/45 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8JTHE3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8AT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8HT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8HTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8JTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8JT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8HCT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
UGB8HCTHE3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCTHE3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
UGB8HCTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
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