Allicdata Part #: | UGB8JTHE3/81-ND |
Manufacturer Part#: |
UGB8JTHE3/81 |
Price: | $ 0.66 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 8A TO263AB |
More Detail: | Diode Standard 600V 8A Surface Mount TO-263AB |
DataSheet: | UGB8JTHE3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.59072 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.75V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 30µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | UGB8J |
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Diodes - Rectifiers - Single
Introduction
UGB8JTHE3/81 is a semiconductor device that belongs to the diode-rectifier family. It is a single-phase bridge rectifier in which the two diodes are connected in series to form a bridge – making it a four-layer device.
Application
UGB8JTHE3/81 is widely used in power supply, voltage regulator and speed control systems. It can also be used in light dimming applications to control the brightness of a light.
Working Principle
The working principle of a bridge rectifier is based on the fact that the current will only flow through the device when the two diodes are forward biased. When the two diodes are connected in series, the applied voltage will be rectified – meaning that the positive current will only flow through one diode while the negative current will only flow through the other diode.
In order to achieve a bridge rectifier configuration, four diodes are connected in parallel in which two of the diodes are simultaneously connected in series. This creates a bridge-like structure and makes the device work as a single rectifier.
When an AC voltage is applied to the rectifier circuit, the current may flow either in a single direction or in a bidirectional manner depending on the applied voltage. During the positive-going half-cycle, the positive current flows through one diode while the negative current flows through the other diode. Then, during the negative-going half-cycle, the opposite occurs and the current flows in the opposite direction. The result is a DC signal with coherent signal peaks.
Conclusion
UGB8JTHE3/81 is a single-phase bridge rectifier, which is a four-layer device. It is widely used in power supply, voltage regulator and speed control systems. It can also be used in light dimming applications to control the brightness of a light. The working principle of a bridge rectifier is based on the fact that the current will only flow through the device when the two diodes are forward biased, creating a rectified DC signal.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UGB8BT-E3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CT-E3/45 | Vishay Semic... | 0.41 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/45 | Vishay Semic... | 0.92 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/45 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/45 | Vishay Semic... | 0.44 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8FT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8JT-E3/45 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8HTHE3/45 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8JTHE3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8AT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8HT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8HTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8JTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8JT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8HCT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
UGB8HCTHE3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCTHE3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
UGB8HCTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
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