Allicdata Part #: | UGB8FTHE3/81-ND |
Manufacturer Part#: |
UGB8FTHE3/81 |
Price: | $ 0.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 300V 8A TO263AB |
More Detail: | Diode Standard 300V 8A Surface Mount TO-263AB |
DataSheet: | UGB8FTHE3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.50274 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -40°C ~ 150°C |
Description
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Introduction
UGB8FTHE3/81 is a single rectifier diode developed by Motorola. It is also referred to as a UBS trapezoid diode as it has a highly efficient trapezoidal shape. It is most commonly used for power switching applications due to its relatively small size and low cost. This diode is suitable for use in applications requiring higher current ratings and lower voltages than the standard UBS types.Application Field
The UGB8FTHE3/81 is typically used in high-power switching applications, usually in the automotive, medical, and military industries. It is also commonly used in power supplies, voltage protection, and motor controllers. Some of the more popular applications include power generation and storage, load switching, motor starting, and overvoltage protection. It is also suitable for use in low-noise switching systems due to its low capacitance.Features
The UGB8FTHE3/81 offers several features. It has a high forward current capability of up to 300A and a minimum breakdown voltage of 600V. It also has a fast switching speed, which allows for efficient energy management. Additionally, this diode has an ultra-low capacitance, which helps reduce switching noise.Working Principle
The UGB8FTHE3/81 works on the principle of rectifying voltage. When the voltage at its anode is higher than its cathode, the diode is forward biased, resulting in a current flow through the diode. When the voltage at the anode is lower than the cathode, the diode is reverse biased and the current flow stops. This makes the UGB8FTHE3/81 ideal for use in power switching applications, as it can easily regulate the amount of current that flows through the circuit.Pros and Cons
The UGB8FTHE3/81 has a number of advantages. It is a low-cost, reliable, and efficient solution for power switching applications. Additionally, it can handle high current values, offers fast switching times, and has a low capacitance, which helps reduce switching noise.However, the UGB8FTHE3/81 also has some drawbacks. It is not suitable for ultra-high voltage applications, and its low breakdown voltage means it can be easily damaged in overvoltage conditions. Additionally, it is not a good choice for low-noise systems due to its high capacitance.Conclusion
The UGB8FTHE3/81 is a single rectifier diode developed by Motorola. It is usually used in high-power switching applications, such as in power generation and storage, load switching, motor starting, and overvoltage protection. The diode offers a high forward current capability of up to 300A, a minimum breakdown voltage of 600V, and fast switching speed. Additionally, it has an ultra-low capacitance, which helps reduce switching noise. Although it has several advantages, the UGB8FTHE3/81 also has some drawbacks, such as its inability to handle ultra-high voltage applications, and its high capacitance, which can lead to increased noise.The specific data is subject to PDF, and the above content is for reference
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UGB8AT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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UGB8CT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8HT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8HTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8JTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8JT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
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