Allicdata Part #: | UGB8GTHE3/81-ND |
Manufacturer Part#: |
UGB8GTHE3/81 |
Price: | $ 0.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 8A TO263AB |
More Detail: | Diode Standard 400V 8A Surface Mount TO-263AB |
DataSheet: | UGB8GTHE3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.50274 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -40°C ~ 150°C |
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UGB8GTHE3/81 application field and working principle
Current rectifiers play an important role in transformers, inverters, UPSs and other power supplies. They are indispensable components in the power grid. The UGB8GTHE3/81 is a single diode rectifier designed to provide reliability and safety even in the most demanding applications. The UGB8GTHE3/81 is ideal for applications that require fast response, such as data switching circuits and AC protections.
The UGB8GTHE3/81 is a highly efficient electrolytic aluminum nitride (AlN) diode rectifier with a JEDEC abbreviation of UGB8GTHE3/81. The aluminum nitride material helps increase conductivity and reduce power dissipation making it a great choice for high-power applications. The UGB8GTHE3/81 can provide fast switching and response times while providing excellent current carrying capacity.
The UGB8GTHE3/81 uses a single anode to allow forward current to pass through only in one direction, for rectification. It provides a low forward voltage drop, increasing the current capacity and creating a more efficient circuit. The reverse recovery time is significantly faster than other rectifiers, allowing it to respond quickly to reverse-biased circuitry with no time delay. This rectifier also has fast switching times, making it well-suited for applications requiring high frequency or pulse switching.
The UGB8GTHE3/81 is rated for a reverse voltage of 8 volts and a peak forward surge current of 90 amps. It can handle transient overvoltage up to -50V without degradation in performance, making it an ideal choice for applications that require surge protection. The UGB8GTHE3/81 has a bipolar construction, making it suitable for high temperature operation up to 150 degrees Celsius.
Overall, the UGB8GTHE3/81 is a highly efficient single diode rectifier with excellent current and voltage capabilities. It features a low forward voltage drop, fast switching times and a fast response time which make it ideal for high power applications such as UPSs, motor control, data switching and AC voltage protection circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UGB8BT-E3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CT-E3/45 | Vishay Semic... | 0.41 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/45 | Vishay Semic... | 0.92 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/45 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/45 | Vishay Semic... | 0.44 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8FT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8JT-E3/45 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8HTHE3/45 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8JTHE3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8AT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8HT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8HTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8JTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8JT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
UGB8HCT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCT-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
UGB8HCTHE3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCTHE3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
UGB8HCTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE ARRAY GP 500V 4A TO... |
UGB8JCTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE ARRAY GP 600V 4A TO... |
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