UGB8CTHE3/45 Allicdata Electronics
Allicdata Part #:

UGB8CTHE3/45-ND

Manufacturer Part#:

UGB8CTHE3/45

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 8A TO263AB
More Detail: Diode Standard 150V 8A Surface Mount TO-263AB
DataSheet: UGB8CTHE3/45 datasheetUGB8CTHE3/45 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.44349
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: UGB8C
Description

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Diodes – Rectifiers – Single

UGB8CTHE3/45 are basic diodes, meaning they are made from a single type of semiconductor material, usually silicon. This makes them a part of a wider family of diodes called “rectifiers”, which are designed to convert alternating current (AC) to direct current (DC) and also have the ability to regulate the amount of current flowing through them.

Application Field

UGB8CTHE3/45 are typically used in applications where the need for a reliable and effective rectifying solution is paramount. When set up with the right driving circuits, it can be employed in a variety of circuits in many different fields where application of a reliable rectifying solution is paramount. Some of the more common usage scenarios of this diode include switching, rectifying and voltage stabilizing applications in high-power supplies, electric vehicles, as well as traction control applications in ships and other means of transportation.

Working Principle

UGB8CTHE3/45 works based on the chemical properties of the silicon most often used in its construction. When the diode is exposed to an electric voltage field, negative ions from the silicon material move to the positively charged electrode and leave positive ions on the negative electrode. This process is known as “charge carrier injection”, and is used to create a low-resistance path for current flow.

Charge carrier injection causes the current to flow through the diode in a single direction and with a much lower resistance than when it is open circuited. The presence of the diode limits the current flow from the positive to the negative terminal, such that the voltage drop across the two electrodes is low.

In the case of AC power, when the electric field reverses, so does the charge carrier injection, allowing charges to flow through the diode in the opposite direction, creating a low-resistance path again. This phenomenon is used in applications where the need to regulate or even out incoming AC power is paramount.

Conclusion

UGB8CTHE3/45 diodes are powerful tools that provide reliable voltage regulation and rectifying solutions. They are often employed in a variety of circuits in many different fields, where application of a reliable rectifying solution is paramount. Although they can have high power ratings and provide many different solutions for a variety of applications, understanding the working principles behind them and using them in the right way is essential for successful deployment.

The specific data is subject to PDF, and the above content is for reference

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