Allicdata Part #: | UGB8CTHE3/81-ND |
Manufacturer Part#: |
UGB8CTHE3/81 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 150V 8A TO263AB |
More Detail: | Diode Standard 150V 8A Surface Mount TO-263AB |
DataSheet: | UGB8CTHE3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.49017 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 150V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | UGB8C |
Description
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Diodes - Rectifiers - Single - UGB8CTHE3/81 Application Field and Working Principle The UGB8CTHE3/81 is a diode-rectifier that is part of the UltraEase Series of rectifier and diode components, manufactured by IXYS Integrated Circuits Division. This particular component is a single-phase, full-wave bridge rectifier diode with ultra-low forward-voltage drop and soft recovery, optimized for rectified current levels of up to 10A.Applications:The UGB8CTHE3/81rectifier is designed for use in a wide range of different applications, including automotive electronics, power-conversion circuits, UPS systems, battery-based power systems, motor drives, and solar power applications. It is also suitable for use in high-efficiency rectifier circuits and in low-noise electronic devices.Working Principle:The UGB8CTHE3/81 is a single-phase, full-wave bridge rectifier diode. It consists of two symmetrical branches, connected in series and each branch made up of two anti-parallel diodes connected together. The main features of this type of rectifier are its full-wave operation, high-frequency operation, and low forward-voltage drop. When a voltage is applied across the bridge rectifier, the two branches of the bridge rectifier become forward-biased and a current flows through the bridge rectifier, giving rise to the rectified output at the center-tap. The full-wave rectification efficiency provided by this type of rectifier is relatively high, as it ensures that both positive and negative half-cycles of the applied signal are utilized, thereby increasing the overall efficiency of the rectifier circuit.Features:The UGB8CTHE3/81 bridge rectifier diode offers a number of key features, such as a low forward-voltage drop (VF at 10A) of 0.65V, a soft-recovery feature, and a high thermal cycling capability of 600 cycles. These features make the UGB8CTHE3/81 particularly suitable for low-noise operations, such as those encountered in solar-power applications. Additionally, the diode has a high-performance avalanche ratings and a maximum repetitive peak reverse voltage of 800V, making it well-suited for applications where a large amount of power needs to be rectified.Advantages:The UGB8CTHE3/81 offers numerous advantages for applications where high-efficiency rectification and low-noise performance are required. It provides a low forward-voltage drop (VF at 10A) of 0.65V, which significantly reduces losses in the rectification process. Additionally, the soft recovery feature ensures that voltage spikes occurring during the diode\'s recovery phase are minimized. This feature makes the UGB8CTHE3/81 particularly suitable for use in sensitive electronic circuits that are easily affected by voltage noise. The component also has a high thermal cycling capability of 600 cycles, which allows it to withstand harsh environmental conditions without experiencing performance degradation.Conclusion:The UGB8CTHE3/81 is a single-phase, full-wave bridge rectifier diode that offers excellent rectification efficiency and low-noise performances. It features a low forward-voltage drop (VF at 10A) of 0.65V, soft recovery, and a high thermal cycling capability of 600 cycles. This makes it a suitable component for a range of different applications, including automotive electronics, power-conversion circuits, UPS systems, and battery-based power systems. Additionally, its avalanche ratings and high repetitive peak reverse voltage of 800V make it ideal for high-efficiency and low-noise rectification operations.The specific data is subject to PDF, and the above content is for reference
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UGB8CT-E3/81 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DT-E3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8ATHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
UGB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
UGB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
UGB8DTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
UGB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
UGB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
UGB8HT-E3/81 | Vishay Semic... | 0.63 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
UGB8HTHE3/81 | Vishay Semic... | 0.66 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
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