Allicdata Part #: | US1B/1GI-ND |
Manufacturer Part#: |
US1B/1 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1B/1 Datasheet/PDF |
Quantity: | 1000 |
3600 +: | $ 0.07902 |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | US1B |
Series: | -- |
Packaging: | Bulk |
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Diodes are electrical components used to conduct electricity in one direction by allowing current to flow in one direction and blocking current from flowing in the opposite direction. Diodes can be used for applications such as voltage regulation and signal rectification, and therefore, the selection of the correct diode is essential. A single diode is a type of diode that consists of a single layer of rectifying material. It is the simplest type of diode and functions as a switch, regulating current flow.
The U11B/1 is a single diode made of germanium and is used in high-frequency applications. It is classified as a rectifier diode as it conducts current in the forward direction and blocks current in the reverse direction. The maximum forward current applied to the diode is 1A and its maximum reverse voltage is 100V. The forward voltage drop of the U11B/1 is 0.3V and the reverse leakage current is 15mA. The U11B/1 also provides excellent average current handling capabilities and is well suited for use in power supplies and audio circuits.
The working principle of this single diode is based on the PN junction and the junction barrier. When a voltage is applied to the diode, the P and N materials on the diode create a potential barrier which prevents any current from flowing through the diode. When the applied voltage surpasses the built-in threshold voltage of the diode, the built-in potential barrier is broken and current starts to flow through the PN junction. This allows for current to flow in the forward direction, but current is blocked in the reverse direction.
The U11B/1 is typically used in applications that require high power capability such as power supplies, rectifier circuits, and audio circuits. It can also be used in rf applications such as mixers and detectors. This diode can replace other germanium diodes such as the 1N60 and 1N857. It is also an excellent choice for voltage regulation and signal rectification.
The U11B/1 single diode is an excellent choice for a wide range of applications due to its robust performance and excellent current handling capabilities. Its high power specification allows it to be used in high-power applications such as power supplies and rectifier circuits, as well as in rf applications. Its low forward voltage drop and reverse leakage current also make it suitable for voltage regulation and signal rectification. With its versatility and high-performance capabilities, the U11B/1 is a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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