Allicdata Part #: | US1BHE3/61T-ND |
Manufacturer Part#: |
US1BHE3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1BHE3/61T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1B |
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US1BHE3/61T Application Field and Working Principle
US1BHE3/61T Diodes are classified as single rectifiers, meaning they are used to rectify alternating current into direct current. These diodes are used in a wide range of applications, as they are easy to mount, lightweight, and have low power losses.
The US1BHE3/61T Diode is a general-purpose diode that can be used in applications including power supplies, unidirectional current sources, relays, and AC circuits. It is designed to be used in circuits that have a peak forward current of 3.5A, reverse current of 1.0A and a reverse voltage of 600V. It also has features such as a low reverse leakage current of 10 microamps, fast switching speed, and a high junction temperature of up to 170°C.
Additionally, the US1BHE3/61T Diodes are used in high power switching applications where high surge and surge recovery rates are required. For instance, in bridge rectifier circuits, this diode allows for the efficient switch from alternating current to direct current. In addition, these fast diodes are used in silicon-controlled rectifiers and as series and bypass replacements for larger rectifiers.
In order to understand the working principle of a US1BHE3/61T Diode, we must first look at how a diode works in general. A diode is a semiconductor device which, under certain conditions, allows current to flow in one direction but not in the other. In the US1BHE3/61T Diode, when the anode is more positive than the cathode, current will flow through the diode and then the diode will operate in a forward bias. Likewise, when the cathode is positive than the anode then the diode will operate in the reverse bias and current will not flow.
In addition, the US1BHE3/61T Diodes are equipped with a negative resistance characteristic, meaning that when the diode is turned “on”, the current will increase as the voltage is increased. This is because the diode’s internal resistance is less than that of a wire. This current increases until the voltage reaches the diode’s peak forward voltage, at which point the diode is at its peak forward conduction. Conversely, when the reverse voltage is applied, the current will start to decrease until it reaches zero. This is known as the reverse breakdown voltage.
The US1BHE3/61T Diode differs from other diodes, such as Zener diodes, because it is a fast switch, due to its low saturation voltage, VF. It also has a fast switching speed, which is beneficial in AC circuits, and it is able to dissipate less heat.
Finally, the US1BHE3/61T Diodes are most commonly used in applications that require high power, low losses, and fast switching. They are also extremely versatile, as they are able to withstand high voltages and temperatures. As a result, these diodes can be used in a wide range of applications and circuits.
The specific data is subject to PDF, and the above content is for reference
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