US1B-13 Discrete Semiconductor Products |
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Allicdata Part #: | US1BDITR-ND |
Manufacturer Part#: |
US1B-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 100V 1A SMA |
More Detail: | Diode Standard 100V 1A Surface Mount SMA |
DataSheet: | US1B-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | US1B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The diode classification strictly covers the engineering area of solid-state devices, and one of the most commonly used devices is a single diode fabricated using a P-N junction or a Schottky junction of two terminals. As such, US1B-13 falls under the broader classification of single, rectifying diodes that are designed and manufactured for a specific purpose. This article will discuss the application field and the working principle of US1B-13.
US1B-13 is a high voltage, avalanche-rugged, rectifying diode that exhibits fast switching capabilities and high surge current ratings with steady state current up to 10A. It can also be used in harsh environments, such as in high surge applications, high temperature areas, and vibration-prone locations, making it suitable for use in pulse power, motor control and defibrillator applications. Additionally, it offers improved rectification and conduction performance while in operation, which gives it the added benefit of offering improved speed and efficiency.
The working principle of US1B-13 is quite straightforward. When a positive voltage is induce on the anode of the diode, the diode will conduct current, allowing current to flow from the anode to the cathode. Conversely, in the off-state, no current will flow from the anode to the cathode. Instead, the diode will block any current from passing through it, preventing it from flowing from the anode to the cathode. US1B-13 also features an “avalanche breakdown” feature, which is the process in which a high voltage is applied to the diode and causes it to break down, allowing a surge of current to move through the diode.
In addition to its various uses in pulse power, motor control and defibrillator applications, US1B-13 can also be used in other high-voltage, high-current applications. For example, it can be used in the automotive sector where it can regulate high-current and high-voltage signals, as well as in power supplies and lighting circuits where it can block direct current (DC) and allow alternating current (AC) to pass through. Additionally, US1B-13 can also be used for charging and discharging of electrical devices, as well as for voltage clamping, a process which is used to limit the voltage from an electrical source to prevent it from exceeding a certain value.
Overall, US1B-13 is one of the most versatile rectifying diodes in the market, making it suitable for a multitude of applications. It can handle high currents, surges and temperatures, making it a reliable and efficient choice for use in a variety of power applications. Additionally, since it features a “avalanche breakdown” feature, it can also provide safety and protection against electrical shock in certain applications. Thus, as a result, US1B-13 is ideal for a variety of applications in both the automotive sector and the industrial sector.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1B R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 100V 1A DO... |
US1B-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
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US1B-E3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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US1BHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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US1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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US1B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A SM... |
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