US1B-TP Allicdata Electronics

US1B-TP Discrete Semiconductor Products

Allicdata Part #:

US1B-TPMSTR-ND

Manufacturer Part#:

US1B-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 100V 1A DO214AC
More Detail: Diode Standard 100V 1A Surface Mount DO-214AC (SMA...
DataSheet: US1B-TP datasheetUS1B-TP Datasheet/PDF
Quantity: 1000
5000 +: $ 0.05061
10000 +: $ 0.04614
25000 +: $ 0.04316
50000 +: $ 0.03969
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: US1B
Description

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A US1B-TP is a kind of diode, specifically a single rectifier. It is a type of semiconductor device designed to protect components or systems from over-voltage caused by electrostatic discharge or inductive loading. The US1B-TP is a rectifying diode made with a glass-passivated junction. It comes in 2-pin packages and is designed for high-speed and low forward-voltage drop.The diode consists of a p-n junction which consists of layers of either N-type or P-type material. These layers of material create an electric field across the junction and allow current to flow in one direction only. In the US1B-TP, the electric field is generated by the glass-passivated layer, which is a thin layer of glass that is formed around the junction to protect it from over voltage.The US1B-TP is often used in traffic and other applications that require a high degree of surge protection, such as LED lighting and automotive electronics. Its fast switching speed and low forward voltage drop make it ideal for circuit applications that require quick response times. Additionally, the diode is able to withstand high electrical stress due to its reverse breakdown voltage up to 600V and surge current up to 30A.In operation, the US1B-TP is able to conduct current in one direction only. When a positive voltage is applied to the anode (the pin on the diode that has a positive polarity), the diode conducts and current flows from the anode to the cathode (the pin with a negative polarity). When a negative voltage is applied to the anode, the diode blocks current flow. This feature allows the US1B-TP to protect against over voltage and current surges. The forward voltage drop is also very low, which helps it to minimize power loss in the circuit.In conclusion, the US1B-TP is a single rectifier used for high-speed and low-voltage applications. It features a glass-passivated junction which provides a high level of surge protection while its low forward voltage drop minimizes power loss. This makes it well suited for use in traffic and other applications that require high-speed and low-voltage protection.

The specific data is subject to PDF, and the above content is for reference

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