US1B-E3/61T Discrete Semiconductor Products |
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Allicdata Part #: | US1B-E3/61TGITR-ND |
Manufacturer Part#: |
US1B-E3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1B-E3/61T Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The US1B-E3/61T is a single-phase, high-efficiency and high-speed rectifier diode. It is used in many different applications across multiple industries, including automotive, medical, telecommunications, and consumer electronics. The device is most commonly used as a polarity separator, allowing just the positive or negative components of an alternating current (AC) signal to pass through with minimal distortion.
The US1B-E3/61T is a surface-mounted device with a low-profile, very small lead-count package. The device is easy to integrate with no extra components necessary. It is available in reverse-voltage versions and can be optimized for various working parameters. The device has a relative humidity range of 2 to 80%.
The US1B-E3/61T uses a junction between its two rectifier elements and a gate which are used to control its on and off states. It operates in a bridge configuration and its gate is used to modulate its current, allowing the device to operate efficiently at different frequencies. It can operate at high voltage, with reduced conduction losses while providing a high breakdown voltage. It also has a high current capability, which makes it very useful for a variety of applications.
The US1B-E3/61T is designed for a variety of AC/DC power applications including DC–DC converters, motor drives, power supplies, and solar/battery charge controllers. The device can also be used in RF rectifier circuits such as modulators and power amplifiers, as well as in switching circuits for high-speed digital data communication.
The US1B-E3/61T diode provides several benefits due to its high efficiency, fast operation, and low dynamic resistance. It ensures high-speed switching, low voltage loss, improved power efficiency, and high breakdown voltage. This rectifier diode is suitable for use in high-speed switching and commutation modes.
In conclusion, the US1B-E3/61T diode is a high-efficiency, fast-switching, and easy-to-use surface-mount rectifier device. It is used in a variety of applications in many different industries, and provides many benefits due to its high efficiency, fast operation, and low dynamic resistance. It is an ideal choice for a variety of AC/DC power applications, RF rectifier circuits, and switching circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1B R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 100V 1A DO... |
US1B-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
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US1B-13-F | Diodes Incor... | -- | 30000 | DIODE GEN PURP 100V 1A SM... |
US1BFA | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 1A SO... |
US1B M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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