Allicdata Part #: | US1BM2G-ND |
Manufacturer Part#: |
US1B M2G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1B M2G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04053 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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US1B M2G application fields and working principles have been essential studies since the industrial revolution and their application has come a long way since then. This article will discuss how US1B M2G works and is used in the fields of engineering and industrial operations. A US1B M2G diode, also known as a single-diode rectifier, is a solid-state device comprised of three layers: two P-type layers surrounding an N-type layer. The P-type layers are made of a special material called gallium arsenide (GaAs). The N-type layer consists of silicon. To create a diode, holes are cut in the top P-type layer. In the case of the US1B M2G diode, the open circuit voltage between these two layers can be up to 2.4 volts. The second P-type layer has some Zener voltage rating applied to it, typically 6 to 12 volts. When the US1B M2G diode is forward biased, or forward conducting, current flows from the positive to the negative terminal of the diode. Direct current (DC) passes through the diode to the load circuitry. Reverse current, or reverse bias, is prevented by the presence of the Zener voltage. This restricts current in the reverse direction, effectively limiting its pass-through to zero. Additionally, due to the reverse bias, the diode will not be permanently damaged, no matter how large the reverse voltage is. Due to its properties, a US1B M2G diode can be used in a wide variety of applications, the most common being for power conversion or for the purpose of rectifying AC current. The US1B M2G diode can convert AC current from a wall outlet into DC current and be used to power electronic devices. Rectification is also another common use for this diode. Rectification is used to convert AC current into DC current by allowing current to flow in only one direction. This can be used in applications such as power supplies, lighting, and DC motors. US1B M2G diodes can also be used to protect sensitive equipment from dangerous transients. Transients can cause severe damage to delicate equipment. By inserting a US1B M2G diode into the circuit, the current is limited in the opposite direction, allowing the equipment to function properly despite the sudden current spike. When used in electronics and industrial applications, US1B M2G diodes can provide protection from voltage surges, noise suppression, and current control. Voltage regulation can also be achieved in some cases. Some applications require a large amount of current to be safely regulated, and the US1B M2G diode can be used for this purpose. Overall, the US1B M2G diode is an invaluable component in industrial and electronic engineering today. Its ability to convert AC to DC, provide current regulation, and protect from transients makes it an essential part of any engineer’s toolkit. With its wide range of use cases, the US1B M2G diode is sure to remain an important part of engineering and industrial operations for many years to come.The specific data is subject to PDF, and the above content is for reference
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