US1K-13-F Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	800V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	75ns
Current - Reverse Leakage @ Vr:	5µA @ 800V
Capacitance @ Vr, F:	10pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	SMA
Operating Temperature - Junction:	-65°C ~ 150°C
Base Part Number:	US1K

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Introduction to US1K-13-F

The US1K-13-F is a rectifier diode designed for high frequency electronic systems. This diode family is designed to provide low voltage drop and high efficiency for a variety of applications. It has a wide temperature range and long-term reliability. It has a low forward voltage, low reverse current leakage, and high peak current capability, making it an excellent choice for high frequency applications.

Application Field for US1K-13-F

The US1K-13-F can be used in a variety of applications, including:

• Switching power supplies
• Motor drives
• AC/DC converter circuits
• DC/DC converter circuits
• DC/AC power inverters
• TV and monitor power supply circuits
• Telecommunication circuits

The US1K-13-F is suitable for applications that require high reliability and long lifetime. It also has a low forward voltage drop and low reverse leakage current, which makes it suitable for high-frequency switching circuits.

Working Principle of US1K-13-F

The US1K-13-F is a single rectifier diode. It has a maximum forward voltage drop of 1.3V, a maximum reverse voltage of 1000V, and a maximum forward current capacity of 13A. The diode is designed to provide excellent temperature and long-term reliability.When a current flows in the forward direction through the diode, it allows the current to flow while blocking any reverse current. This gives the diode its rectifying characteristics. The forward voltage drop of the US1K-13-F is low, which makes it very efficient in dissipating heat. In reverse bias, the US1K-13-F has a low reverse current leakage, which ensures a long lifetime. The breakdown voltage of the US1K-13-F is 1000V, which is much lower than the operating voltage of the diode. This ensures that the breakdown voltage will not be reached unless the operating voltage is too high.

Conclusion

The US1K-13-F is an excellent choice for high-frequency electronic systems. It has a wide temperature range and long-term reliability as well as low forward voltage and low reverse current leakage. It is also suitable for applications that require high-efficiency and low voltage drop. Furthermore, it has a high peak current capability which makes it an ideal choice for switching applications.

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