US1K R3G Discrete Semiconductor Products |
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Allicdata Part #: | US1KR3GTR-ND |
Manufacturer Part#: |
US1K R3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 1A DO214AC |
More Detail: | Diode Standard 800V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1K R3G Datasheet/PDF |
Quantity: | 1800 |
1800 +: | $ 0.04960 |
3600 +: | $ 0.04313 |
5400 +: | $ 0.03881 |
12600 +: | $ 0.03451 |
45000 +: | $ 0.03235 |
90000 +: | $ 0.02875 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are a type of electronic component commonly used to regulate electric current flow. Rectifier diodes are one type of diode with a specific electronic configuration used to effectively rectify alternating currents (AC) into direct currents (DC). The US1K R3G is a specific type of rectifier diode designed to manage high voltage, high current applications while maintaining high stability. This article will provide an overview of the US1K R3G application field and working principle.
The US1K R3G is a high voltage rectifier diode with a reverse breakdown voltage of 1000 volts, a peak repetitive forward current of 9.0A , and a non-repetitive peak surge current of 50A. The device has a high temperature operating performance rating of 175°C . It is used in numerous applications that require efficient electro-mechanical conversion of AC to DC, such as power supplies, motor controllers, and other industrial equipment.
US1K R3G devices are generally divided into two parts, the anode (positive side) and the cathode (negative side). The cathode of the device is typically connected to an electrical ground. In the opposite direction, the anode is connected to the AC voltage supply. When the AC voltage supplied is positive, electrons flow through the N-type semiconductor material and into the P-type region, resulting in a current flow directions from the anode to the cathode.
The structure of the US1K R3G device further enhances the rectifying capability of the diode. It is made up of two series-connected PN junction diodes, one of which is a high-breakdown voltage (HV) diode and the other, a low-breakdown voltage (LV). When an alternating voltage is applied to the device, electrons flow from the positive Anode to the low-breakdown voltage diode, then from the LV to HV diode, and finally to the negative Cathode. This structure allows for more efficient electro-mechanical conversion of AC to DC than if a single PN junction diode was used.
The US1K R3G devices are also designed for enhanced heat dissipation, with a thermal dissipation rate totaling 770mW at 175°C. Its superior thermal design also allows the device to remain stable under high loads and temperatures, making it a reliable choice for use in high power applications.
In summary, the US1K R3G is an advanced rectifier diode designed for high voltage, high current operations. It is built using two series-connected PN junction diodes, one of which is high-breakdown voltage and the other, low-breakdown voltage, allowing it to efficiently convert AC to DC. It is also designed to effectively dissipate heat, making it a stable choice for applications such as power supplies and motor controllers.
The specific data is subject to PDF, and the above content is for reference
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