US1KHE3/5AT

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Diodes - Rectifiers - Single

The US1KHE3/5AT rectifier is a type of single rectifier diode. It is a monolithic structure comprised of two dies, each containing a schottky barrier rectifier with a common cathode. This device is ideal for use in applications that require low forward current, fast switching speeds, and low reverse leakage. The device is capable of fast switching speeds, excellent surge and transient capability, and low forward current.

Application Field

The US1KHE3/5AT rectifier is ideal for use in a variety of applications, such as switching power supplies, DC-DC converters, UPS systems, automotive electronic systems, LEDs, solar inverters, and server power systems. The diode can also be used in AC mains applications, such as bridges and single-phase or three-phase rectifier applications.

Working Principle

The US1KHE3/5AT rectifier operates on the principle of a schottky barrier. This is accomplished by forming a barrier between a metal electrode and a semiconductor region. In this case, the metal electrode is an aluminum-indium-phosphorous alloy and the semiconductor is an n+- or p+-type doped silicon. When a forward voltage is applied, electrons are attracted from the metal electrode to the semiconductor region, forming a diode junction. This diode then acts as a rectifier and allows current to flow one way only.

The US1KHE3/5AT rectifier has a junction capacitance of 2.5 pF at a reverse voltage of zero, and a typical forward voltage drop of 0.36 volts. The device also features a high surge capability and excellent temperature stability, allowing it to withstand temperatures up to 160°C (Tjmax). The device also has a low reverse leakage current of 35 nA at a reverse voltage of 50 V.

The device is available in a variety of packages, such as a SOD-5 package, a SOD-7 package, and a SOT-23 package. The SOD-5 package allows for better thermal dissipation, while the SOT-23 package offers a more compact solution.

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