Allicdata Part #: | US1KHE3/61T-ND |
Manufacturer Part#: |
US1KHE3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 1A DO214AC |
More Detail: | Diode Standard 800V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1KHE3/61T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1K |
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Diodes are electronic components that conduct current in only one direction. They are typically used in electrical circuits for filtering and rectifying alternating current (AC). The US1KHE3/61T is a single rectifier diode that can be used for a range of applications. This article will look at the application field and working principle of the US1KHE3/61T.
The US1KHE3/61T is a compact and robust component with a high current and voltage rating and an excellent performance. It can be used for various applications, such as AC/DC power supplies, protection circuits, motor drives and rectification. It has a maximum forward repetitive peak reverse voltage of 600 volts, a maximum forward voltage of 0.85 volts and a minimum breakdown voltage of 600 volts. It also has a maximum average forward current of 10 amperes.
The working principle of the US1KHE3/61T is based on a classical rectifying circuit. When a positive voltage is applied to its anode, the diode becomes conducting and it allows the current to flow in its forward direction. When the voltage is reversed the diode prevents any current flow in the reverse direction. This process is known as rectification and is the basis of the US1KHE3/61T’s function.
The US1KHE3/61T can also be used in applications such as AC/DC power supplies, bridge rectifiers, filter circuits, voltage regulators, switch mode power supplies, RF amplifiers and voltage multipliers. It can be used as a rectifier in AC circuits, or as an isolator, as it has a high forward voltage drop. It is also useful for smoothing the AC pulses that are present in the output voltage from certain DC power sources.
The US1KHE3/61T has a very simple construction. It consists of two opposing leads, an anode and a cathode, one of which is attached to the positive part of the circuit and the other to the negative part. It also has a small glass body and a coating of protective plastic to protect the device from electrostatic discharges.
In conclusion, the US1KHE3/61T is a highly efficient single rectifier diode with a wide range of applications. It has a high current and voltage rating and excellent performance. Its working principle is based on the classical rectifying circuit and it is primarily used for AC/DC power supplies, bridge rectifiers, filter circuits and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1K-E3/61T | Vishay Semic... | -- | 9000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3_A/H | Vishay Semic... | 0.1 $ | 1800 | DIODE GEN PURP 800V 1A DO... |
US1K R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 800V 1A DO... |
US1K-TP | Micro Commer... | 0.06 $ | 10000 | DIODE GEN PURP 800V 1A DO... |
US1KFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A SO... |
US1K-13-F | Diodes Incor... | -- | 10000 | DIODE GEN PURP 800V 1A SM... |
US1K M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KSAFS-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 800V 1A SM... |
US1K-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1K-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
US1K-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1K-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 800V 1A SM... |
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