Allicdata Part #: | US1KM2G-ND |
Manufacturer Part#: |
US1K M2G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 1A DO214AC |
More Detail: | Diode Standard 800V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1K M2G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.03800 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The US1K M2G diode is a type of diode commonly used for a variety of applications. It is part of the family of single rectifier diodes, and it can also be called a Schottky barrier or a Schottky rectifier. As such, it is capable of providing high-speed switching, as well as low-level current leakage.
The basic design of the US1K M2G diode consists of a metal-semiconductor contact point. This contact point is the source of the rectification process. Basically, the electrons that flow through the contact point are unable to pass through the semiconductor material. This causes them to recombine at the metal-semiconductor interface, resulting in charged pairs. These pairs can then be used to create a flow of current, as long as a suitable voltage is applied.
The US1K M2G diode is mainly used for low voltage applications. It is capable of providing efficient power conversion at relatively low voltages, and it is capable of operating at even lower voltages than the other types of diodes. Its ability to handle high power levels with low working voltage makes it ideal for many applications.
The US1K M2G diode has the ability to operate at high frequencies, which makes it suitable for use in high frequency applications. It is capable of switching power at extremely high frequencies, and its low-leakage current characteristic makes it perfect for use in low-noise applications. Additionally, it offers very low power dissipation in comparison to other rectifier diodes, making it one of the most efficient diode types.
The US1K M2G diode is ideal for applications such as low voltage AC/DC converters, DC-DC converters, and telecommunications. It is also used in RF amplifiers and RF detectors, as well as in other types of power supplies. Additionally, it is commonly used in control circuits and power supplies, as well as in digital circuits.
The primary advantages of using the US1K M2G diode include its high speed switching, its low leakage current characteristics, its low power losses, and its high efficiency levels. Additionally, its low voltage characteristics make it well suited to many low voltage applications. However, it is important to note that it is not suitable for use in high voltage applications, due to its limited breakdown voltage.
Overall, the US1K M2G diode is one of the most versatile and reliable types of single rectifier diodes available. Its wide range of features and characteristics make it an ideal choice for many types of applications, ranging from low power DC/DC converters to high power RF amplifiers. It is also reasonably priced, making it an attractive option for many electrical engineers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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