US1K-13 Discrete Semiconductor Products |
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Allicdata Part #: | US1KDITR-ND |
Manufacturer Part#: |
US1K-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 800V 1A SMA |
More Detail: | Diode Standard 800V 1A Surface Mount SMA |
DataSheet: | US1K-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | US1K |
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.Single rectifier diodes, such as the US1K-13, are semiconductor devices used to convert alternating current (AC) electrical energy into direct current (DC). A single rectifier diode has two terminals, an anode, and a cathode, with the anode being the positive electrode and the cathode being the negative electrode. AC power is applied to the anode, and current flows from the anode to the cathode, rectifying the alternating current into direct current. A variety of shapes, sizes, and types of diodes, including the US1K-13, are available for various applications.
Characteristics
The US1K-13 is a package, with 600V peak repetitive reverse voltage, 1A continuous forward current and a fast recovery time. It is rated at 13A maximum transient peak forward surge current. The forward voltage drop is 1.1V max at full 1A forward current. This diode can withstand 2000 volts surge repetitive off-state voltage. Its maximum junction temperature reaches 175°C and Its storage temperature range is between -65°C to +175°C. As it is a surface mounted device, it has a lead-free/RoHS compliant profile.
Applications
Single rectifier diodes, such as the US1K-13, are versatile and are used in a number of applications. They are used in the front-end stages of AC/DC converters, switching power supplies and chargers for mobile phones and other electronic devices. They can also be used for AC ripple suppression, rectification, inverters and DC/DC converters.
The US1K-13 can be used in automotive applications, especially in engines and new emission control products, as well as battery-operated products such as pedometers, heart rate monitors and cyclocomputers. It is often used in lighting systems and other consumer appliances, such as air conditioners, CD players, and digital cameras. The diode is also commonly used for communication devices such as modems, routers, and data converters.
Working Principle
The working principle of the US1K-13 involves utilizing the rectification effect of the p-n junction formed by the anode and the cathode contacts. When AC current is supplied to the anode, it passes through the junction, leaving the cathode and arriving at the anode. When the AC reaches the peak of its positive cycle, it crosses the forward bias threshold, allowing current to flow through the diode, thus rectifying the AC into DC. When the AC reaches its peak of the negative cycle, it is blocked by the junction which is in reverse bias, stopping the current flow and preventing DC from flowing through the circuit.
The direct current generated by the US1K-13 is almost unipolar, however, due to capacitance and the resistance of the load, a small voltage ripple is observed. Reverse current, on the other hand, is blocked by the diode and cannot flow through the circuit. The US1K-13 is suitable for applications requiring high accuracy of conversion and low ripple.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1K-E3/61T | Vishay Semic... | -- | 9000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3_A/H | Vishay Semic... | 0.1 $ | 1800 | DIODE GEN PURP 800V 1A DO... |
US1K R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 800V 1A DO... |
US1K-TP | Micro Commer... | 0.06 $ | 10000 | DIODE GEN PURP 800V 1A DO... |
US1KFA | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A SO... |
US1K-13-F | Diodes Incor... | -- | 10000 | DIODE GEN PURP 800V 1A SM... |
US1K M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KSAFS-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 800V 1A SM... |
US1K-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1K-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
US1K-E3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1KHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
US1K-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 800V 1A SM... |
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