Allicdata Part #: | VF20120S-E3/45GI-ND |
Manufacturer Part#: |
VF20120S-E3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 120V 20A ITO220AB |
More Detail: | Diode Schottky 120V 20A Through Hole ITO-220AB |
DataSheet: | VF20120S-E3/45 Datasheet/PDF |
Quantity: | 1000 |
Series: | TMBS® |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 120V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.12V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 300µA @ 120V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
Operating Temperature - Junction: | -40°C ~ 150°C |
Base Part Number: | VF20120S |
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A diode rectifier is an electronic device that is used to convert alternating current into direct current. It works by allowing current to flow primarily in one direction, blocking electrons from travelling in the opposite direction. VF20120S-E3/45 is a rectifier diode from Vishay Semiconductor that is used to convert AC electrical power into useful DC power. It has a reverse voltage of 20V and a surge power rating of 45 Watts.
VF20120S-E3/45 is a single diode rectifier, which is designed to handle high frequencies of up to 200kHz, and a maximum forward voltage of 1.3V. It is also designed with a thermally enhanced aluminum-ceramic package, which helps to increase the durability of the device while also increasing its heat dissipation. The device also features a low reverse leakage current of only 4mA.
VF20120S-E3/45 is well-suited for use in applications such as motor control, power supplies, bridge rectifiers, freewheeling diodes, and SMPS. It is commonly used in power converters and DC sources, and is also suitable for use in RF signal switching and signal network applications. The low reverse forward voltage drop of this device allows for efficient signal trace design and power supply design, making it a great choice for many applications.
VF20120S-E3/45 rectifier diodes are able to function due to the inherent principles of diode operation. When the anode is positive, positive charge will move towards the P-type region of the device, while in the case of reversed bias (anode being negative), no current will flow as the P-type region is at a lower potential. Now, due to the application of forward bias (anode being more positive than the cathode), electrons will start flowing from the n-type region to the P-type region creating what is known as a forward conducting channel.
In reverse bias, the depletion region grows. This region is created by the diffusion of electrons on the N-type region and diffusions of holes into the P-type region. This will act as a barrier or insulation for the movement of electrons, effectively blocking them from flowing across the junction which creates a non-conductive junction in the device, thereby rectifying the flow of current.
The VF20120S-E3/45 rectifier diode from Vishay Semiconductor is a single device that is designed for use in applications such as motor control, bridge rectifiers, power supplies, freewheeling diodes, and signal network applications. As the device comes with a thermally enhanced aluminum-ceramic package, it offers a longevity that makes it a great choice for any application. With its low reverse forward voltage drop and low reverse leakage current of only 4mA, the device is perfect for efficient signal trace design and power supply design.
The specific data is subject to PDF, and the above content is for reference
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