VF20150SG-E3/4W

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Introduction

The VF20150SG-E3/4W rectifier diode is produced by Vishay Semiconductor, a leading manufacturer of semiconductor devices. It is a single configuration, which is suitable for many applications in telecommunications, automotive, LEDs, and general industrial applications.

Features

The VF20150SG-E3/4W rectifier diode provides a number of features that make it an ideal choice for a wide range of applications. These include a maximum breakdown voltage of 200V, a non-repetitive peak current of 2.2A and a forward voltage drop of 1.0V at 1A. Additionally, the device has an avalanche energy rating of 8.5mJ at a junction temperature of 150°C, a current temperature coefficient of -2mV/°C, and a maximum reverse current leakage of 500μA. Additionally, the device is rated to operate at temperatures ranging from -55 to 150°C.

Application Fields

The VF20150SG-E3/4W rectifier diode is suitable for low-voltage, high-frequency operation and can be used in a variety of applications, such as power supplies, battery chargers, lighting systems, automotive control modules and automotive system monitoring. It is also used in telecommunications, such as cell phones, radios and portable communication devices, as well as in general industrial applications. The device is also suitable for use in LEDs, as it can be utilized in backlighting applications.

Working Principle

The VF20150SG-E3/4W rectifier diode is a single component configuration, meaning that it consists of a single diode connected between two terminals. When a voltage is applied to the diode, the diode will conduct current in the forward direction and block current in the reverse direction. This property of rectifier diodes makes them suitable for many applications and allows them to be used as a rectifying element in many different types of electrical and electronic circuits.

Conclusion

The VF20150SG-E3/4W rectifier diode is an ideal choice for a variety of telecommunications, automotive, LED and general industrial applications. It is a single component configuration, providing a maximum breakdown voltage of 200V, a non-repetitive peak current of 2.2A and a forward voltage drop of 1.0V at 1A. Additionally, the device is rated for temperatures ranging from -55 to 150°C and has an avalanche energy rating of 8.5mJ at a junction temperature of 150°C. With these features, it is now possible to easily and reliably regulate current flow in a wide range of applications.

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