VF20150C-E3/4W

Series:	TMBS®
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io) (per Diode):	10A
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 10A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	150µA @ 150V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	ITO-220AB

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The VF20150C-E3/4W is a member of a family of diodes designed specifically for array solutions. This family is engineered to meet the stringent requirements of low RDS(on), low-power consumption, and temperature dependence that are associated with high-performance integrated circuit (IC) solutions. This diode is designed to provide a safe way to convert DC energy back into AC energy for efficient operation.The VF20150C-E3/4W is part of the rectifier array family. This family of integrated circuit (IC) rectifiers is used in the power conversion process. The device is designed to withstand a current of up to 15A while maintaining a low VF (forward voltage drop) of only 0.45V. The device operates at a temperature range of -55℃ to +125℃, allowing it to be used in a wide range of applications.The rectifier array family provides a number of components that can be used to convert AC current into DC current. The VF20150C-E3/4W is a high performance diode array with an integrated N-channel power field-effect transistor (FET) for high efficiency switching. The integrated FET reduces power loss and increases the current carrying capability of the device. The silicon die is resistant to thermal shock, electrostatic discharge (ESD), and junction-temperature-induced current stress.The VF20150C-E3/4W is designed to be used in a variety of applications, including AC/DC power converters, telecommunications, battery chargers, motor drives, and motor controllers. These applications require the device to be able to handle large currents and voltages while providing superior efficiency and low power consumption. The device can also be used in automotive and industrial applications, as the low RDS(on) and temperature range allow it to operate reliably in a wide range of environments.The VF20150C-E3/4W has a working principle of reverse-biased PN junction. When forward biasing the diode, a very low voltage drop is realized due to the reverse bias in the P-area. This low voltage ensures that the voltage associated with the transistor is also low, thereby allowing for high power transfer and efficiency. Additionally, the forward biasing leads to a lower reverse wattage drop and voltage loss, resulting in a more efficient structure.When current flows through the device, the reverse-biased junction creates a depletion region in the P-area, which results in a heavily resistive barrier and provides a higher impedance for the reverse bias current. This reduces the total power dissipation and helps to reduce the power transfer efficiency of the unit, improving device performance and thermal stability. A further benefit of the reverse biased junction is that it reduces leakage current and protects the device from electrostatic discharge.The VF20150C-E3/4W is an advanced component and provides improved performance, long life, and efficiency in applications where high power and low voltage demands require it. The advanced construction and low reverse wattage drop of this component make it an ideal choice for DC/DC power conversion and a number of other applications.

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