VF20120SG-M3/4W

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	120V
Current - Average Rectified (Io):	20A
Voltage - Forward (Vf) (Max) @ If:	1.33V @ 20A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	250µA @ 120V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Isolated Tab
Supplier Device Package:	ITO-220AB
Operating Temperature - Junction:	-40°C ~ 150°C

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Introduction

VF20120SG-M3/4W is a rectifier diode capable of handling high voltages at high power rates. This type of device is typically used in applications where robustness and mechanical stability is of importance and is an essential component of many high power rectifying circuits used in industrial and power engineering applications. This article explores the application field and working principle of the VF20120SG-M3/4W.

Application Field of VF20120SG-M3/4W

The VF20120SG-M3/4W is most commonly used to provide high current rectification in applications where high electrical and mechanical robustness of the component is needed. As such, this component is designed for applications such as AC-DC rectifiers, high frequency DC to DC converters, switches, voltage controllers and similar devices. As far as other application fields are concerned, this component can be used with high current rectifiers, such as motor controllers, welding equipment and transistors.

The Working Principle of VF20120SG-M3/4W

The VF20120SG-M3/4W is a fast switching component that uses a Schottky diode, giving it the ability to handle very high voltages, currents and power ratings. It is capable of switching on and off at very high speeds and its maximum reverse current leakage is only 0.01 nanoseconds. This makes it suitable for high frequency switching applications, such as those used in industrial and power engineering.The VF20120SG-M3/4W also boasts reverse voltage blocking capability, which means it can block any reversed voltages applied to it without suffering any damage. Its breakdown voltage is also high, at 1200 volts, making it suitable for use in high voltage rectification applications.

Conclusion

The VF20120SG-M3/4W is a high voltage, high current rectifier diode designed for applications where robustness and mechanical stability are important. It has a high maximum reverse current leakage of 0.01 nanoseconds, and its breakdown voltage is 1200 volts, making it suitable for use in very high voltage circuit designs. In addition, it can block reversed voltages, making it a very reliable and safe component. With its high power ratings, it is suitable for many industrial and power engineering applications, and its high frequency switching capabilities make it a great choice for rectification applications.

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