| Allicdata Part #: | VMO1200-01F-ND |
| Manufacturer Part#: |
VMO1200-01F |
| Price: | $ 103.86 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 1245A Y3-LI |
| More Detail: | N-Channel 100V 1220A (Tc) Chassis Mount Y3-Li |
| DataSheet: |  VMO1200-01F Datasheet/PDF |
| Quantity: | 56 |
| 1 +: | $ 94.41180 |
| 10 +: | $ 88.24340 |
| 25 +: | $ 85.15780 |
| Series: | HiPerFET™ |
| Packaging: | Tray |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 1220A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.35 mOhm @ 932A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 64mA |
| Gate Charge (Qg) (Max) @ Vgs: | 2520nC @ 10V |
| Vgs (Max): | ±20V |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Supplier Device Package: | Y3-Li |
| Package / Case: | Y3-Li |
| Base Part Number: | VMO |
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The VMO1200-01F is a silicon-based vertical metal oxide semiconductor field effect transistor (MOSFET), used for power switching and signal control applications. As a single MOSFET, the VMO1200-01F has an efficient operating voltage range of up to 600V, making it suitable for use in a range of medium and high-voltage applications. The device is also suitable for use in lithography-based semiconductor applications.
The VMO1200-01F has a tabulated breakdown voltage (VBD) of approximately 600V and a drain-source voltage (VDS) at a maximum rating of 400V. It is also capable of handling a rated drain current (ID) up to 6.7A, while continuous drain current (ID-CONT) is 13.5A. Additionally, it has an impressive transconductance of 80 S/mm2.
The VMO1200-01F uses a source-to-drain channel to transfer electrical signals, where the gate threshold voltage (VGS-threshold) determines the on-state (ID) and off-state (ID-OFF) current levels. By controlling the gate-source voltage (VGS), the device can be turned on and off, allowing it to act as a switch. This makes the device an ideal choice for applications such as motor control and power switching.
The device has an on-resistance (RDS-ON) of 7m㎡ and a maximum avalanche current (IAS) of 46A. Additionally, it offers a high-frequency operation, with considerable power handling capabilities up to 12W.
The VMO1200-01F also boasts an impressive fast switching speed, with a turn-on switching time (ton) of 45ns and a turn-off switching time (toff) of 40ns. These switching speeds make the device suitable for applications such as computer systems, integrated-circuit (IC) test boards, and automated test equipment (ATE).
The VMO1200-01F utilizes an advanced vertical structure, which provides it with an impressive heat dissipation capability whilst maintaining its small footprint. Additionally, the device is constructed of high-quality materials to ensure long-term reliability and durability.
In summary, the VMO1200-01F is an advanced silicon-based vertical MOSFET, capable of operating in power switching and signal control applications up to 600V. With its high-speed switching capabilities and efficient power handling, it is an ideal choice for a range of medium and high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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