VMO1600-02P Allicdata Electronics
Allicdata Part #:

VMO1600-02P-ND

Manufacturer Part#:

VMO1600-02P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 1900A Y3-LI
More Detail: N-Channel 200V 1900A (Tc) Chassis Mount Y3-Li
DataSheet: VMO1600-02P datasheetVMO1600-02P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: PolarHT™
Packaging: Tray 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 1900A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 1600A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 2900nC @ 10V
Vgs (Max): ±20V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: Y3-Li
Package / Case: Y3-Li
Base Part Number: VMO
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

VMO1600-02P is a type of single MOSFET (metal–oxide–semiconductor field-effect transistor) that is used in a variety of applications. It is most notably used in electronics, especially as an amplifier, in automotive and industrial applications, and in power electronics applications such as adjustable speed drives and power factor correction.

The VMO1600-02P MOSFET is composed of a three-terminal device with four regions: the source, gate, drain and substrate. The source and drain are the two terminals that are connected to the power and voltage sources. The gate is the control terminal and it is responsible for controlling the flow of current between the source and drain. Finally, the substrate is the semiconductor substrate on which the other three terminals are placed.

The operation of a MOSFET is based on the principle of an electric field-effect transistor (FET). An electric field is created between the source and drain terminals, which results in a low-resistance channel between them. The gate can control the size of this channel by changing the amount of electric field between the source and drain. When the gate voltage is positive relative to the source voltage, the MOSFET is said to be in the "on" state and the channel width increases. Conversely, when the gate voltage is negative relative to the source voltage, the MOSFET is said to be in the "off" state and the channel width decreases.

The VMO1600-02P MOSFET is typically used in low-power applications such as signal processing, motor control, and switching regulator designs. It can be used as a switch to turn devices on and off and as an amplifier to amplify signals. It is also used as a power amplifier for high-power applications such as DC-DC converters and impulse circuits. Additionally, it can be used as a variable resistor in radio-frequency signal distortion circuits. In high-frequency applications, it has been used as a high-frequency switch, as a high-frequency amplifier, and as a voltage-controlled oscillator.

The VMO1600-02P MOSFET is designed for use in low power applications and is therefore not suitable for use in high-power applications. It is also not suitable for use in applications where high speed switching is required. However, it is well suited for use in applications where low power consumption and low levels of noise are desired. Furthermore, it is easy to use and can be incorporated into many circuit designs with relative ease.

In conclusion, the VMO1600-02P MOSFET is a single MOSFET that is used in low-power applications such as signal processing, motor control, and switching regulator designs. It can be used as a switch, an amplifier, and even as a variable resistor. It is easy to use and offers a wide range of applications, making it a versatile and powerful device.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "VMO1" Included word is 3
Part Number Manufacturer Price Quantity Description
VMO1600-02P IXYS 0.0 $ 1000 MOSFET N-CH 200V 1900A Y3...
VMO150-01P1 IXYS 0.0 $ 1000 MOSFET N-CH 100V 165A ECO...
VMO1200-01F IXYS 103.86 $ 56 MOSFET N-CH 100V 1245A Y3...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics