Allicdata Part #: | VMO1600-02P-ND |
Manufacturer Part#: |
VMO1600-02P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 1900A Y3-LI |
More Detail: | N-Channel 200V 1900A (Tc) Chassis Mount Y3-Li |
DataSheet: | VMO1600-02P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PolarHT™ |
Packaging: | Tray |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 1900A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 1600A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 2900nC @ 10V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | Y3-Li |
Package / Case: | Y3-Li |
Base Part Number: | VMO |
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VMO1600-02P is a type of single MOSFET (metal–oxide–semiconductor field-effect transistor) that is used in a variety of applications. It is most notably used in electronics, especially as an amplifier, in automotive and industrial applications, and in power electronics applications such as adjustable speed drives and power factor correction.
The VMO1600-02P MOSFET is composed of a three-terminal device with four regions: the source, gate, drain and substrate. The source and drain are the two terminals that are connected to the power and voltage sources. The gate is the control terminal and it is responsible for controlling the flow of current between the source and drain. Finally, the substrate is the semiconductor substrate on which the other three terminals are placed.
The operation of a MOSFET is based on the principle of an electric field-effect transistor (FET). An electric field is created between the source and drain terminals, which results in a low-resistance channel between them. The gate can control the size of this channel by changing the amount of electric field between the source and drain. When the gate voltage is positive relative to the source voltage, the MOSFET is said to be in the "on" state and the channel width increases. Conversely, when the gate voltage is negative relative to the source voltage, the MOSFET is said to be in the "off" state and the channel width decreases.
The VMO1600-02P MOSFET is typically used in low-power applications such as signal processing, motor control, and switching regulator designs. It can be used as a switch to turn devices on and off and as an amplifier to amplify signals. It is also used as a power amplifier for high-power applications such as DC-DC converters and impulse circuits. Additionally, it can be used as a variable resistor in radio-frequency signal distortion circuits. In high-frequency applications, it has been used as a high-frequency switch, as a high-frequency amplifier, and as a voltage-controlled oscillator.
The VMO1600-02P MOSFET is designed for use in low power applications and is therefore not suitable for use in high-power applications. It is also not suitable for use in applications where high speed switching is required. However, it is well suited for use in applications where low power consumption and low levels of noise are desired. Furthermore, it is easy to use and can be incorporated into many circuit designs with relative ease.
In conclusion, the VMO1600-02P MOSFET is a single MOSFET that is used in low-power applications such as signal processing, motor control, and switching regulator designs. It can be used as a switch, an amplifier, and even as a variable resistor. It is easy to use and offers a wide range of applications, making it a versatile and powerful device.
The specific data is subject to PDF, and the above content is for reference
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