Allicdata Part #: | VN0300L-G-ND |
Manufacturer Part#: |
VN0300L-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 30V 640MA TO92-3 |
More Detail: | N-Channel 30V 640mA (Tj) 1W (Tc) Through Hole TO-9... |
DataSheet: | VN0300L-G Datasheet/PDF |
Quantity: | 1284 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 640mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The VN0300L-G device is a short-channel metal–oxide–semiconductor field-effect transistor (MOSFET) that is used in electronic circuits. The device is a 30-V MOSFET rated for 120-A load and fits into single package. It is also rated for an RDS(on) of 5.4 mΩ, a fast propagation delay and a low capacitance turn-on. The device utilizes low surface roughness to make contact with the metal surface. This enables the device to achieve low-loss performance.
The VN0300L-G consists of three parts, the source-drain region, the gate, and a contact layer on the substrate surface. Source-drain region is the region which carries the current flowing between the source and the drain. This region is comprised of multiple semiconductor layers and interfaces to the gate. The gate is the conductive gate material which is located between the source-drain region. This gate is responsible for controlling the current flow by modulating the electric field applied. The contact layer on thesubstrate surface contains low-surface roughness materials to make contact with the metal surface, which reduces the losses.
The device is primarily used in electrical circuits because of its low loss, fast propagation delay, and low capacitance turn-on. The device\'s low loss allows for low voltage drops across components, resulting in higher system efficiency. Its fast propagation delay enables circuit speed switching and its low capacitance turn-on allows for more instantaneous load current. Additionally, it is capable of switching higher loads due to its high current rating.
To control the device, the voltage between the source and the gate must be changed. This can be done by using a gate drive circuit, which can apply a voltage to the gate-source region either directly or through a gate driver. The gate voltage will then turn on the device, allowing current to flow between the source and the drain. The current flow is determined by the resistance of the device, which is the RDS(on). The device will remain on while the gate voltage is greater than the device\'s threshold voltage and the current will be limited by the RDS(on). The device will turn off when the gate voltage is less than the device\'s threshold voltage and current flow will cease.
The VN0300L-G is an ideal device for applications such as power conversion, motor control, and automotive. It is suitable for systems that require high power conversion efficiency and fast switching. Additionally, its low capacitance turn-on and fast propagation delay allows for more instantaneous load occupancy. Due to its wide range of electrical characteristics and its application in various high-power applications, the VN0300L-G is widely used in the electrical industry.
The specific data is subject to PDF, and the above content is for reference
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