VN2106N3-G

Series:	--
Packaging:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	300mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.4V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
FET Feature:	--
Power Dissipation (Max):	1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

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What is VN2106N3-G？

VN2106N3-G is an Enhancement-mode Metal-oxide-semiconductor Field Effect Transistors (MOSFET) used for various applications. It has high voltage drain-source breakdown voltage and low on-state resistance. It is a solution version of N-channel Enhancement-mode MOSFETs, used for Voltage Regulated Electronic On / Off lighting applications and power switching.

Application field of VN2106N3-G

VN2106N3-G can be used in wide range of applications such as Remote Control systems, Industrial, Automotive and Power supply applications, etc. Due to its low on-state resistance and high voltage drain-source breakdown voltage, it can also be used in switching measures.

Working principle of VN2106N3-G

VN2106N3-G is a metal-oxide-semiconductor field effect transistor (MOSFET) used to control the current flow through the device. It operates by controlling the voltage on the gate terminal which affects the conducting channel region between the source and drain electrodes, known as the transchannel. VN2106N3-G is an Enhancement-mode MOSFET, meaning that it operates as an “ON” switch when a positive voltage is applied to the gate

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