VN2110K1-G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.4V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
FET Feature:	--
Power Dissipation (Max):	360mW (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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The VN2110K1-G is a high power MOSFET with a breakdown voltage of 500V and drain-source current of 28.2A. It is widely used in automotive, medical, and industrial applications.The VN2110K1-G is a field-effect transistor (FET), a type of high-power transistor that uses an electric field to control the conductivity of the transistor. The distinguishing feature of a FET is the gate terminal, which is used to control the current flowing through the transistor.The VN2110K1-G uses a metal-oxide-semiconductor field-effect transistor (MOSFET) technology. MOSFETs are compatible with both digital and analog circuits and offer a low on-resistance. They also have a simple construction, high input impedance, low gate current, and excellent frequency characteristics, making them widely used in numerous high-power applications.The VN2110K1-G has two terminals: the source and the drain. The source terminal is connected to the source of the current, typically ground or a negative supply, and the drain is connected to the load, typically a positive supply. A voltage applied to the gate terminal creates a conductive channel between the source and the drain. This allows current to flow, depending on the magnitude of the applied voltage. To turn the transistor off, the voltage at the gate terminal is reduced to zero.The VN2110K1-G also features an ultra-low parasitic stray inductance and an ultra-low junction-to-case thermal resistance, both of which are beneficial in high-power applications. Furthermore, the transistors have an ultra-low gate-drain capacitance and an ultra-low output capacitance, which prevent high-frequency noise and ensure optimal signal transfer.In the automotive industry, the VN2110K1-G is used in power inverters, DC to AC converters, and fuel-injection systems. In medical applications, it is used in imaging systems and patient monitoring devices. And in industrial applications, it is used for power supplies and motor drives.The working principle of the VN2110K1-G is based on MOSFET technology. When an electric field is applied to the gate terminal, this triggers a channel between the source and the drain, allowing current to flow. The effective resistance is proportional to the magnitude of the electric field. To turn the transistor off, the gate voltage is reduced to zero.To summarize, the VN2110K1-G is a high-power MOSFET with a breakdown voltage of 500V and a drain-source current of 28.2A. It is often used in automotive, medical, and industrial applications and its working principle is based on MOSFET technology. The distinguishing feature of this MOSFET is its low on-resistance, simple construction, and excellent frequency characteristics, which make it a popular choice for high-power applications.

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