VRF2933 Allicdata Electronics
Allicdata Part #:

VRF2933-ND

Manufacturer Part#:

VRF2933

Price: $ 79.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET RF PWR N-CH 50V 300W M177
More Detail: RF Mosfet N-Channel 50V 250mA 150MHz 25dB 300W M17...
DataSheet: VRF2933 datasheetVRF2933 Datasheet/PDF
Quantity: 552
1 +: $ 71.97120
10 +: $ 67.47300
25 +: $ 64.32430
100 +: $ 60.72570
Stock 552Can Ship Immediately
$ 79.16
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: N-Channel
Frequency: 150MHz
Gain: 25dB
Voltage - Test: 50V
Current Rating: 2mA
Noise Figure: --
Current - Test: 250mA
Power - Output: 300W
Voltage - Rated: 170V
Package / Case: M177
Supplier Device Package: M177
Description

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Lately, the demand for circuit technology with higher functionality and increased performance has increased significantly. This has resulted in the development of new transistor technologies, such as the VRF2933. The VRF2933 is a metal-oxide-semiconductor field-effect transistor (MOSFET), a type of field-effect transistor (FET) that operates with metal Gates on a semiconductor.

The working principle of the VRF2933 is to control the voltage and current signals in the circuit, while providing optimal power efficiency. When a voltage is applied to the Gate terminal of the transistor, it will subsequently cause a current to travel through the source, body and drain of the device, which then controls the voltage and current of the connected circuit.

The VRF2933 is suitable for a number of applications. Its main purpose is in radio frequency (RF) power amplifiers, where it is used to amplify or adjust the signal strength of a transmitted or received signal. It can also be used in modulators and mixers, for power management applications, and for switching operations such as a SPST (single-pole, single-throw) switch.

In addition to its RF applications, the VRF2933 can also be used in other applications such as frequency up-conversion in printed-circuit boards, pulse oximetry systems, and ultrasonic imaging systems. By combining other components such as resistors and capacitors, the VRF2933 can be used to create an oscillator that can generate the desired output waveform.

The VRF2933 is a reliable and efficient device in RF applications. It has a low total harmonic distortion way below 0.1%, and its power efficiency is higher than 90%. Additionally, the device is extremely durable, as its body is made of a human-safe compound that can withstand high temperatures and humid conditions, providing lengthy service life. It is also capable of handling high voltage and sensitive currents.

The VRF2933 is an attractive option, not just because of its performance, but also its cost-effectiveness. It is a cost-effective alternative that is available in various packaging options and with different ratings, making it suitable for small and large projects. It is also versatile, with its variety of terminal configurations, allowing it to be used in a wide range of applications.

In conclusion, the VRF2933 is a reliable and efficient metal-oxide field-effect transistor. It is suitable for RF applications such as high-frequency power amplifiers, mixers, and even oscillators, as well as for power management, high voltage and sensitive current applications. As it is available in various packaging options and ratings, with a variety of terminal configurations, it is suitable for a wide range of applications while providing cost-effective and long-lasting performance.

The specific data is subject to PDF, and the above content is for reference

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