VRF2933FL Allicdata Electronics
Allicdata Part #:

VRF2933FL-ND

Manufacturer Part#:

VRF2933FL

Price: $ 67.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET RF N-CH 170V 30MHZ T2
More Detail: RF Mosfet N-Channel 50V 250mA 30MHz 22dB 300W M177
DataSheet: VRF2933FL datasheetVRF2933FL Datasheet/PDF
Quantity: 89
1 +: $ 61.17300
10 +: $ 57.35210
25 +: $ 54.67570
Stock 89Can Ship Immediately
$ 67.29
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: N-Channel
Frequency: 30MHz
Gain: 22dB
Voltage - Test: 50V
Current Rating: 42A
Noise Figure: --
Current - Test: 250mA
Power - Output: 300W
Voltage - Rated: 170V
Package / Case: M177
Supplier Device Package: M177
Description

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The VRF2933FL is a high gain and high performance LNA (Low-Noise Amplifier) with an integrated input power detector that can detect the RF input power of 2.3GHz 2.7GHz system in devices such as the spectrum analyzer and wireless communication SDR(software-defined radio). The excellent active device parameter matching and tight production control make the gain flatness and the excellent noise figure over the wide frequency range. This is an ideal device for the application such as wireless communications and radio/TV broadcasting.

The application field for the VRF2933FL includes wireless communications and radio/TV broadcasting. It is mainly used as a low-power amplifier for signals from 2.3GHz to 2.7GHz. The VRF2933FL is suitable for detecting and amplifying weak signals in the board after pre-amp or mixers, especially in the software-defined radio(SDR). Moreover, the integrated input power detector function is useful for information recording or applications monitoring in communication systems.

The working principle of the VRF2933FL is based on field-effect transistor (FET) technology for handling radio signals. It is built using the topology of cascode MOSFETs to optimize the gain and noise figure. The push-pull series connection of output devices ensures excellent linearity, harmonic suppression, and gain flatness. In addition, the circuit contains high impedance RF input and a balanced output matching network as well as input power detector, which allows precise control over the device\'s gain and feature precise input impedance matching.

The integrated input power detector function of the VRF2933FL is based on the dual-gate technology. The input power is received by the detector gate and converted to the output DC voltage which controls the power level of the RF signal. The input power detector provides reliable information of RF power in the frequency range of 2.3GHz to 2.7GHz and can be used to monitor signal strength in the communication system.

The VRF2933FL is designed with excellent matching characteristic that guarantees a low noise figure and low maximum variance of gain over frequency and temperature ranges. In comparison to traditional circuits, this device offers low power consumption, high power gain and a wide dynamic range with good linearity. It also provides excellent input and output return loss and harmonic suppression that extends their applicability to various wireless communication systems.

To sum up, the VRF2933FL is an ideal low-noise amplifier for longer-range radio signals used in applications such as wireless communication and radio/TV broadcasting. It is designed using field effect transistor technology for handling radio signals and can detect and amplify weak radio signals in the board. The integrated input power detector allows precise control of the device\'s gain and feature precise input impedance matching. Moreover, the VRF2933FL provides excellent matching characteristic that guarantees a low noise figure and low maximum variance of gain over frequency and temperature ranges, ensuring a wide dynamic range with good linearity.

The specific data is subject to PDF, and the above content is for reference

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