VRF2944MP Allicdata Electronics
Allicdata Part #:

VRF2944MP-ND

Manufacturer Part#:

VRF2944MP

Price: $ 165.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET RF N-CH 170V 50A M177
More Detail: RF Mosfet N-Channel 50V 250mA 30MHz 25dB 400W M177
DataSheet: VRF2944MP datasheetVRF2944MP Datasheet/PDF
Quantity: 1000
10 +: $ 150.08800
Stock 1000Can Ship Immediately
$ 165.1
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: N-Channel
Frequency: 30MHz
Gain: 25dB
Voltage - Test: 50V
Current Rating: 50A
Noise Figure: --
Current - Test: 250mA
Power - Output: 400W
Voltage - Rated: 170V
Package / Case: M177
Supplier Device Package: M177
Description

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Modern technology has propelled the development of many useful items that are part of everyday life, such as the VRF2944MP. This semiconductor device is based on the Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) technology and is used in a variety of radio frequency (RF) applications. In this article, we will explore the VRF2944MP\'s application field, its working principle, and its main features.

VRF2944MP Application Field

The VRF2944MP is a vertical MOSFET that is specifically designed to operate under the high frequency demands of radio frequency applications. It can be used for various applications such as RF amplifiers, RF power transistors, low-noise amplifiers, VHF/UHF power amplifiers, and high-speed logic. The device provides high output power and excellent linearity, making it an ideal choice for high-frequency operations.

VRF2944MP Working Principle

The working principle of the VRF2944MP is based on the Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) technology. This type of transistor works by controlling the amount of voltage sent across a gate, which then becomes the main lever of current that flows through the device. When more voltage is sent across the gate, more current will be allowed to flow through the transistor, which in turn increases the output power. Alternatively, when less voltage is sent across the gate, less current will be allowed to flow through the device, thus reducing the output power.

In the case of the VRF2944MP, it is designed to operate as a power amplifier. This means that it can achieve higher output powers compared to other transistors. It also provides increased linearity and greater control over the current that is flowing through the device. In addition, the device is designed to operate with a low drain-source voltage of 6 V, making it suitable for high-frequency operations.

Main Features

The VRF2944MP offers several features that make it suitable for RF applications. It features low noise, low distortion, and high dynamic range, making it well-suited for radio frequency applications. The device also offers high gain, with a typical gain of 8 dB at a frequency of 1GHz. Additionally, the device offers low-on-resistance of 35 ohms, which helps to minimize power losses and reduce the heat generated by the device. The device is also designed to operate with a low drain-source voltage, which helps to reduce power consumption.

In addition to these features, the VRF2944MP also offers excellent RF immunity and excellent linearity. This makes it suitable for applications where linearity and RF immunity is important, such as in low-noise amplifiers or VHF/UHF power amplifiers.

Conclusion

The VRF2944MP is a vertical MOSFET that is specifically designed to operate under the high frequency demands of radio frequency applications. It offers excellent features, such as low noise, low distortion, high dynamic range, low-on-resistance, and high gain. It also offers excellent linearity, which makes it suitable for applications that require high linearity and high RF immunity. This makes the VRF2944MP a great choice for radio frequency applications.

The specific data is subject to PDF, and the above content is for reference

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