WPB4001-1E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The WPB4001-1E is a high-power N-channel MOSFET designed for load switching and power amplifier applications. It has many features that make it ideal for use in a range of applications, such as telecommunication repeaters, high power audio systems, and power amplifiers. This article provides an overview of the WPB4001-1E application field and its working principle.

Overview

The WPB4001-1E is designed for use in various load switch and power amplifier applications. It has an excellent performance in terms of linear current transfer ratio and switching speed, making it suitable for use in high power audio systems. It also has a very low on-state resistance, enabling it to switch high power loads quickly and efficiently. The device offers high dv/dt and di/dt capabilities, making it capable of handling large surge currents. It is also rated to operate over a wide temperature range of -55°C to 175°C.

Applications

The WPB4001-1E is suitable for use in a range of applications, such as:

• Telecommunication repeaters
• High power audio systems
• Power amplifiers
• Motor control
• Industrial process control
• Lighting control

Working Principle

The WPB4001-1E is a high-power N-channel MOSFET. It is constructed using a three-terminal transistor structure, which consists of a source (S), gate (G) and drain (D) terminals. These terminals are connected to the MOSFET structure, as shown in the figure below.

The source and drain terminals of the MOSFET are connected to the load, while the gate terminal is controlled by a signal. When the gate voltage is greater than the threshold voltage, the MOSFET is said to be \'on\', and a current flows from the source to the drain. At this point, the MOSFET behaves like a closed switch and the load is supplied with power. Conversely, when the gate voltage is less than the threshold voltage, the MOSFET is said to be \'off\' and no current flows through it. At this point, the MOSFET behaves like an open switch and the load is not supplied with power.

Conclusion

The WPB4001-1E is a high-power N-channel MOSFET with many features that make it suitable for use in a wide range of applications. It has excellent performance in terms of its switching speed and linear current transfer ratio, as well as its capability to handle high surge currents. Its low on-state resistance and wide temperature range also makes it ideal for use in high power audio systems and power amplifiers.

The specific data is subject to PDF, and the above content is for reference