WPB4002-1E

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WPB4002-1E is a single-channel N-channel MOS transistor. It is a power Field-Effect Transistor (FET) designed for low-frequency switching applications. The WPB4002-1E can be used in a variety of circuit applications, such as motor controllers, off-line switching supplies, DC/DC converters, and many more. Furthermore, it is well-suited for use in smart home devices, automotive, telecommunications, and industrial applications.

The WPB4002-1E has many key features and parameters that make it an efficient, reliable, and cost-effective solution. It has an 80-volt drain-to-source breakdown voltage and 25-amp drain current that makes it ideal for powerful applications. It also has a small on-resistance of 680 milliohms, which ensures a low conduction loss. The WPB4002-1E puts out remarkably low conduction losses and has a small footprint due to its compact and efficient design. Finally, its lead-free RoHS compliant package makes it suitable and cost-effective for a variety of general applications.

The WPB4002-1E\'s working principle is based upon the underlying MOSFET structure. In essence, the transistor structure consists of three main regions. The source and the drain are both doped with N-type semiconductors which form a PN junction with the gate region in between. When the gate voltage is low, the device is turned "off" as it blocks current flow between source and drain. When the voltage applied to the gate is increased (positive for an N-Channel device such as the WPB4002-1E), the N-type channel forms between the source and drain and allows current to flow. As a result, the device is turned "on" allowing current to flow.

The traditional MOSFET also uses a parasitic body diode to protect against electrostatic discharge. The body diode is formed as a result of the N-type channel between the source-drain terminals and the substrate. When the device is off, the diode conducts current in the reverse direction to the drain terminal, providing ESD protection. The body diode is also useful in preventing negative voltage spikes on the drain terminal due to the reverse voltage applied while keeping other parts of the circuit at negative voltage. The WPB4002-1E also employs a reverse body diode to provide robust ESD protection.

Due to its various advantages, the WPB4002-1E is an ideal solution for a variety of circuit applications. Its small size, cost-effectiveness, and low current conduction loss make it an ideal choice for power FET applications. Additionally, its reverse body diode ensures reliable operation and ESD protection. Therefore, the WPB4002-1E is a versatile and reliable power FET suitable for a variety of low-frequency switching applications.

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