XP151A13A0MR-G Allicdata Electronics
Allicdata Part #:

XP151A13A0MR-G-ND

Manufacturer Part#:

XP151A13A0MR-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Torex Semiconductor Ltd
Short Description: MOSFET N-CH 20V 1A SOT23
More Detail: N-Channel 20V 1A (Ta) 500mW (Ta) Surface Mount SOT...
DataSheet: XP151A13A0MR-G datasheetXP151A13A0MR-G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
Vgs (Max): ±8V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The XP151A13A0MR-G is an N-channel silicon MOSFET released by Diodes Incorporated. This device is an easy-to-use single MOSFET with high current capability in the form of an industry-standard TO-220 package. This MOSFET has a drain current rating of 65 amps and a drain-to-source breakdown voltage of 600 volts.

MOSFETs can be used in a variety of applications, ranging from power regulation to signal conditioning. In this article, we\'ll take a look at some of the primary applications for the XP151A13A0MR-G and understand the working principle behind this device.

Applications

The XP151A13A0MR-G is a widely used MOSFET that can be used in a number of applications where a high current capability is needed. Some of the main applications of this MOSFET include:

  • Power supply regulation
  • Motor control
  • Relay and solenoid driving
  • Switching and control circuits

In addition, the device is also compatible with the popular STM32 microcontrollers, which makes it a very useful component for embedded projects.

Working Principle

The working principle of MOSFETs is based on the transistor effect. It relies on the gate-source voltage to control the flow of current between the drain and source terminals. When a voltage is applied to the gate terminal, it creates an inversion layer in the semiconductor channel, which facilitates the flow of current between the drain and source terminals.

The XP151A13A0MR-G is an N-channel MOSFET, which means that when the gate voltage is positive, the device is “on”, and the current flows from the drain to the source. If the gate voltage is negative, the device is “off”, and no current flows between the drain and source.

The XP151A13A0MR-G has a maximum drain current rating of 65 amp, making it suitable for applications that require a high current capability. It also has a maximum drain-to-source breakdown voltage rating of 600 volts, allowing the device to be used in high-voltage applications.

Conclusion

The XP151A13A0MR-G is a versatile and easy-to-use N-channel MOSFET from Diodes Incorporated. It has a high current capability and can be used in a variety of applications, such as power supply regulation, motor control, and switching and control circuits. The working principle of MOSFETs is based on the transistor effect, which relies on the gate-source voltage to control the flow of current between the drain and source terminals.

The specific data is subject to PDF, and the above content is for reference

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