XP151A13A0MR

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XP151A13A0MR is a power MOSFET dual-gate enhancement-mode transistor. It is intended for use in bidirectional single-pole/single-throw (SPST) switching, high-current low-voltage applications. The MOSFET has a low threshold voltage to reduce the drive requirement. The saturation voltage of the device is low, making it suitable for low on-state voltage applications like switching high efficiency linear power supplies, and a dual-gate structure minimizes the series resistance.

The Structure of XP151A13A0MR

XP151A13A0MR is an enhancement-mode, normally-off MOSFET. Its structure includes a chip-type metal-oxide-semiconductor (MOS) transistor, which is isolated from the metal gate by a thin silicon dioxide layer. The MOSFET is formed with a metal gate, insulation semiconductor layer, and substrate.

A low threshold voltage (Vt) is achieved by applying a positive voltage to the gate. The MOSFET is then said to be in its "on" state, allowing current to flow between the drain and source. When there is no voltage applied to the gate, the MOSFET is in its "off" state and no current flows between the drain and source.

Features of XP151A13A0MR

XP151A13A0MR offers several features:

• Low off-state channel resistance, R_ds(on) , of 5.45Ω
• Low threshold voltage, V_t, of 1.5V
• Low on-state voltage, V_ds(on), of 0.063V
• Low drive requirement, allowing for small, low-cost drivers

Application Field of XP151A13A0MR

The XP151A13A0MR is suitable for many high-current low-voltage applications, such as high-efficiency linear power supplies, battery chargers, and DC-DC converters.

It can also be used in consumer applications such as consumer audio/video applications and in automotive applications, industrial motor control, telephones, and LED lighting.

Working Principle of XP151A13A0MR

The XP151A13A0MR is designed to act as a switch. With no voltage being applied to the gate, the MOSFET is in its “off” state, blocking any current flow between the drain and source. When a specific voltage is applied to the gate, the MOSFET is “on”, allowing current to flow between the drain and source. The voltage at which the MOSFET turns “on” is called the threshold voltage and it depends on the device parameters.

The current flow can be adjusted or turned on and off by varying the voltage applied to the gate. The on-state voltage (V_ds(on)) depends on the design of the MOSFET, but is typically very low, in the order of 0.063V.

Conclusion

XP151A13A0MR is a power MOSFET dual-gate enhancement-mode transistor. It is intended for use in bidirectional single-pole/single-throw (SPST) switching, high-current low-voltage applications. It offers a low on-state voltage, making it suitable for low on-state voltage applications. The MOSFET is ideal for use in consumer applications such as consumer audio/video applications and in automotive applications, industrial motor control, telephones, and LED lighting. Its working principle is based on applying a voltage to the gate, which when exceeded, turns “on” the switch, allowing current to flow between the drain and source.

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