XP161A11A1PR-G

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	270pF @ 10V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	65 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The XP161A11A1PR-G is a type of transistor belonging to the family of Field Effect Transistors, more specifically, it is a single Metal-Oxide-Semiconductor Field Effect Transistor – MOSFET. It is a unipolar semiconductor device comprised of four operations gates and terminals, consisting of the source (S), the drain (D), the gate (G) and, the body or substrate connection. The working principle of the the XP161A11A1PR-G lies in the PCMOS technology, which basically means Positive channel MOSFET. This technology allows the drain current to flow through the channel formed between the source and drain. The MOSFET is an electrically controlled transistor which can be manipulated by applying voltage between the gate and the source terminals of the transistor as well as between the drain and the source terminals.The gate voltage determines the characteristics of the field effect transistor, including the current flowing through the channel. In the case of the XP161A11A1PR-G MOSFET, it has an on-state drain current of 11A and an on-state source-drain voltage of 30 V.The XP161A11A1PR-G MOSFET has a variety of applications. Given its features, it is a very useful component for a system that requires a higher output current than a regular MOSFET. It can be used in a wide range of applications, ranging from motor control to high power switching and signal conditioning circuits.For motor control, XP161A11A1PR-G can be used in DC motors with a high current draw, such as those used in robotics. The device can be used to speed up and slow down the motor with precise motor speed control. In terms of power switching, the XP161A11A1PR-G MOSFET can be used to switch AC or DC power circuits, as well as to control the current level in power circuits. This makes it ideal for applications that require the precise control of large current levels, such as in an automotive environment.Finally, the XP161A11A1PR-G MOSFET can also be used for signal conditioning applications, providing precise and noise-free signal conditioning for a variety of signals. It can be used to boost the signal-to-noise ratio for analog systems, or as a pre-charger for low-power systems.Overall, the XP161A11A1PR-G MOSFET is an incredibly versatile device that can be used in a variety of applications. Thanks to its features, it is often used when a higher output current than a regular MOSFET is needed. It is also very reliable and durable, making it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description