| Allicdata Part #: | XP161A1265PR-ND |
| Manufacturer Part#: |
XP161A1265PR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Torex Semiconductor Ltd |
| Short Description: | MOSFET N-CH 20V 4A SOT89 |
| More Detail: | N-Channel 20V 4A (Ta) 2W (Ta) Surface Mount SOT-89 |
| DataSheet: |  XP161A1265PR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-243AA |
| Supplier Device Package: | SOT-89 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 10V |
| Vgs (Max): | ±12V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 2A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The XP161A1265PR, a single N-channel enhanced mode MOSFET, is a discrete semiconductor device optimized for power switching applications. It is an extremely versatile device, suitable for many different types of applications. It is most commonly used in power switching applications, such as motor control, industrial automation and process control. The device is also suitable for use in other higher power switching applications, such as LED lighting and solar energy systems.
The key features of the XP161A1265PR include low on-state resistance, high intensity gate-source voltage, and low input capacitance. The low on-state resistance allows for better efficiency and lower power dissipation. The high gate-source voltage provides improved reliability and durability, and low input capacitance provides low power consumption and fast switching speeds.
The XP161A1265PR is a passivated MOSFET device. It is a built-in level shifting circuit, with an N-channel device, which is formed from two oppositely biased P-channel devices. The device is designed to be used in a range of switching applications with low power dissipation. The passivated structure provides an additional layer of protection against electrical and thermal stress.
The working principle of the XP161A1265PR is based on the principle of field effect transistors (FETs). When a voltage is applied to a gate electrode, it causes an electric field to be created between the gate and the source. This electric field causes a change in the electrical properties of the MOSFET, which modulates the flow of current between the source and the drain terminals.
The XP161A1265PR is capable of handling up to 100V, making it suitable for a wide range of applications. It is also designed for ease of use, with an integrated thermal protection feature for over-temperature protection. In addition, it has low input capacitance, which allows for fast switching times.
The XP161A1265PR is ideal for a wide range of applications. It is suitable for use in motor control, industrial automation, and process control. Additionally, the device is suitable for use in high power switching applications, such as LED lighting and solar energy systems.
In conclusion, the XP161A1265PR is an ideal solution for many different types of power switching applications. It is an extremely versatile device, suitable for a wide range of applications. The device has a low on-state resistance, high intensity gate-source voltage, and low input capacitance, making it suitable for use in many different types of switching applications. Additionally, it has an integrated thermal protection feature and low input capacitance, making it an ideal choice for fast switching times.
The specific data is subject to PDF, and the above content is for reference
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