XR46000ESETR Discrete Semiconductor Products |
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Allicdata Part #: | 1016-2071-2-ND |
Manufacturer Part#: |
XR46000ESETR |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | MaxLinear, Inc. |
Short Description: | MOSFET N-CH 600V 1.5A SOT223 |
More Detail: | N-Channel 600V 1.5A (Tc) 20W (Tc) Surface Mount SO... |
DataSheet: | XR46000ESETR Datasheet/PDF |
Quantity: | 12500 |
2500 +: | $ 0.13197 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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XR46000ESETR is a type of FET, or Field-effect transistor, which is a three-terminal semi-conducting device that amplifies or switches an electrical signal. It is an important component in many electronic applications because of its low input impedance, low cost, high power efficiency, and large current handling capability. As such, it is used in a variety of applications, such as higher frequency switch transistors, impedance matching networks, power amplifiers, oscillators, voltage regulating circuits, and converters. It is also widely used for the high-speed switching applications due to its low on-state resistance.
The XR46000ESETR is an enhancement mode MOSFET, which is a specific kind of FET with a metal oxide as the gate insulator between the gate and channel. A MOSFET has a drain-source voltage VDS, gate-source voltage VGS and can either be in the ON state, where VGS is much higher than Vth (threshold voltage) or the OFF state, where VGS is much lower than Vth. In the ON state, the channel is almost pinched off, so the current flowing between the source and the drain is almost zero. In the OFF state, the channel is fully opened, allowing the full current flow between the source and the drain.
The XR46000ESETR has a relatively low on-state resistance, which allows for faster switching speeds and higher power efficiency compared to other types of FETs. It also has a very low input capacitance, which reduces overshoot and ringing effects. The low gate threshold voltage is ideal for low-power applications, making it suitable for use in portable and hand-held devices. Finally, its large current handling capability makes it suitable for applications that require high power.
To use the XR46000ESETR in a circuit, a gate voltage must be applied to the gate terminal. This voltage can be either AC or DC depending on the application. When the gate voltage is sufficiently high, the MOSFET will enter the ON state, allowing current to flow between the source and drain terminals. Thus, by controlling the gate voltage, the current flow can be varied, allowing the XR46000ESETR to act as an amplifier, switch, or regulator.
In conclusion, the XR46000ESETR is a type of FET that has a low input capacitance, low threshold voltage, and high current handling capability. It can be used in a variety of applications as an amplifier, switch, or regulator, depending on the circuit and the desired operation. The low on-state resistance allows for faster switching speeds and higher power efficiency compared to other FETs, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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