Allicdata Part #: | Z0103NA1AA2-ND |
Manufacturer Part#: |
Z0103NA 1AA2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRIAC SENS GATE 800V 1A TO92-3 |
More Detail: | TRIAC Logic - Sensitive Gate 800V 1A Through Hole ... |
DataSheet: | Z0103NA 1AA2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Triac Type: | Logic - Sensitive Gate |
Voltage - Off State: | 800V |
Current - On State (It (RMS)) (Max): | 1A |
Voltage - Gate Trigger (Vgt) (Max): | 1.3V |
Current - Non Rep. Surge 50, 60Hz (Itsm): | 8A, 8.5A |
Current - Gate Trigger (Igt) (Max): | 3mA |
Current - Hold (Ih) (Max): | 7mA |
Configuration: | Single |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | Z01 |
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TRIACs are three-terminal electronic switches that are widely used as a type of thyristor. They are composed of two semiconductor layers, referred to as anode and cathode. The terminals of a TRIAC are called the gate, main terminal 1 (MT1), and main terminal 2 (MT2).
The Z0103NA 1AA2 thyristor is a medium power, voltage-controlled, three-terminal bidirectional TRIAC. It is designed for use in industrial, commercial, and residential lighting controls, motor speed control, and heater control. It features symmetrical breakdown characteristics from the anode to either of the two main terminals. When the gate is biased, with positive or negative voltage between it and either MT1 or MT2, the device will conduct current in both directions when the voltage is above the VBO trigger level. Upon cessation of current or voltage, the device goes into a very fast nonconducting (quench) state.
The Z0103NA 1AA2\'s maximum continuous current rating is 8A, with a maximum pulse current rating of 10A. Its maximum blocking voltage is 600 or 800V, and its peak on-state voltage drop is 2V. The device has a rated peak non-repetitive off-state current of 50mA, with a holding current of 15mA. Its gate trigger voltage is 2.5V-3V, gate trigger current is 5mA, and gate trigger power is 0.5mW.
The working principle of Z0103NA 1AA2 thyristors is based on the principle of the PN junction. The PN junction consists of two semiconductor layers: one layer is positively doped with electrons (N-type), and the other layer is negatively doped with holes (P-type). When a voltage is applied between the two layers, the electrons will flow from the layer with a higher concentration of electrons to the layer with a lower concentration. As the electrons flow, they also create a barrier of opposite electrical charge, which blocks further current flow. If the applied voltage increases above a critical threshold, the barrier will break down and the resulting current will flow freely.
When the Z0103NA 1AA2 is used in an application, a gate voltage is applied across the device\'s terminals. This causes the electrons to flow from the P-type layer to the N-type layer, creating a conducting channel and allowing current to flow. Once the gate voltage is removed, the device will automatically switch off, as the electrons will no longer be able to flow and the conducting channel created by the gate voltage will break down.
The Z0103NA 1AA2 thyristor is a versatile device that can be used in a wide range of applications. It can be used in industrial, commercial, and residential lighting controls, motor speed control, and heater control applications. It can also be used to provide overcurrent protection, and it is compatible with both AC and DC current. Its symmetrical breakdown characteristics, low gate voltage requirement, and fast response make it a very useful device in many types of applications.
The specific data is subject to PDF, and the above content is for reference
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