ZDT605TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 NPN Darlington (Dual)
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1mA, 1A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 1A, 5V
Power - Max:	2.75W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-223-8
Supplier Device Package:	SM8
Base Part Number:	ZDT605

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ZDT605TA Application Field and Working Principle

The ZDT605TA is a multi-channel array transistors made by ZETEX. It is a typeof bipolar junction transistor (BJT) in which a number of discrete transistors are connectedtogether in a single device. This technology is often used to reduce the number of discretetransistor connections required in an assembly, and improve the performance of power switchingcircuits. In this article, we will discuss the application fields and working principle of theZDT605TA transistors.

Application Field

The main application fields for the ZDT605TA transistors are power switching applications as wellas high-voltage, high-current drive applications. The ZDT605TA transistors provide bothhigh-voltage protection and power switching functions. The transistors can be used as voltagelevel translators, isolation barriers, and power switches in various applications. The ZDT605TAtransistors are also used in applications that require high-current control, such as motorcontrol, solenoid control, and DC-DC power conversion.

The ZDT605TA transistors are also used in applications such as digital logic gates, amplifiersand PLL circuits, as well as for measuring high current or high voltages in test and measuringinstruments. The transistors are a popular choice for linear and high power applications.

Working Principle

The ZDT605TA transistors are bipolar junction transistors (BJT) in which a number ofdiscrete transistors are connected in a single device. The transistors operate by forming abase-emitter circuits which is controlled by a base current. As the base current increases, thevoltage drop across the emitter-base junction increases, resulting in an increase in the currentflow through the emitter-collector junction. The amount of current that can flow through thejunction is limited by the current gain or hFE of the transistor and is usually in the range of100-200. The collector current can be controlled by varying the base current, allowing thetransistor to be used for switching purposes as well as for amplifying signals.

The ZDT605TA transistors also have a built-in "protection diode" which helps protect thetransistor from reverse polarity voltages and current surges. This protection diode helpsprevent damage to the transistors in the event of a short-circuit or an over-voltage condition.The protection diode also helps reduce the switching time of the transistor, since the protectiondiode can “absorb” spikes in the voltage or current, allowing the transistor to operate in asafe and stable manner.

The ZDT605TA transistors are also designed to be extremely robust and reliable. The transistorshave a low power dissipation rating of 5 mW and are rated to handle up to 20 A of continuouscurrent. The transistors have a high temperature rating of 150°C, making them ideal for use inpower switching and high temperature applications.

In conclusion, the ZDT605TA transistors are a popular choice for applications where highcurrent and voltage levels are required. The transistors are suitable for a variety of powerswitching and high-voltage drive applications, as well as for measuring instrumentation andamplifier circuits. The transistors have an efficient current gain, rugged construction, and alow power dissipation, making them an ideal choice for a variety of applications.

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