ZDT6705TC

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN, PNP Darlington (Dual)
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1mA, 1A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 1A, 5V
Power - Max:	2.75W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-223-8
Supplier Device Package:	SM8
Base Part Number:	ZDT6705

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Introduction to the ZDT6705TC

The ZDT6705TC is a high performance, monolithic replacement for high power, planar transistors designed to operate in the most demanding high power, high frequency applications. It is an array of three discrete transistors that share a common base and provide extremely low noise and distortion performance. The ZDT6705TC is specifically designed to be used in RF applications such as cellular base station transmitters and receivers, high frequency discretes, and digital transceivers.

Application Field of the ZDT6705TC

The ZDT6705TC has been specifically designed to operate in the most demanding high power, high frequency applications. It is an ideal replacement for aging planar transistors due to its superior noise and distortion performance. The ZDT6705TC is well suited for RF applications such as cellular base station transmitters and receivers, high frequency discretes, and digital transceivers. The device can operate over a temperature range of -55°C to +200°C and is suitable for a wide variety of applications.

Working Principle of the ZDT6705TC

The ZDT6705TC is an array of three discrete transistors that share a common base. The three transistors are driven by a differential voltage across their inputs and together form a three-stage current-controlled amplifier. The first two stages are configured as common-source amplifiers and the third stage is configured as a common-drain amplifier. The outputs of the three stages are cascaded and combined at the output of the device. The ZDT6705TC has a built in gain-bandwidth product of 600 MHz which makes it ideal for high frequency applications. The device is also used for switching applications since it has a wide supply voltage range which allows it to be used with many different voltages and supply configurations. The ZDT6705TC produces low operating noise levels which makes it ideal for use in sensitive areas where noises can cause interference and distortion such as in cellular base station transmitters and receivers. The device is also well suited for high frequency discretes and digital transceivers which require high levels of performance.

Conclusion

The ZDT6705TC is a high performance, monolithic replacement for high power, planar transistors designed to operate in the most demanding high power, high frequency applications. It is an array of three discrete transistors that share a common base and provide extremely low noise and distortion performance. The ZDT6705TC has been specifically designed to operate in the most demanding high power, high frequency applications and is well suited for RF applications such as cellular base station transmitters and receivers, high frequency discretes, and digital transceivers.The device can operate over a temperature range of -55°C to +200°C and is suitable for a wide variety of applications. The ZDT6705TC has a built in gain-bandwidth product of 600 MHz which makes it ideal for high frequency applications and it has a wide supply voltage range which allows it to be used with many different voltages and supply configurations.

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