Allicdata Part #: | ZDT6757TC-ND |
Manufacturer Part#: |
ZDT6757TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP 300V 0.5A SM8 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 300V 500mA... |
DataSheet: | ZDT6757TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 5V |
Power - Max: | 2.75W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-223-8 |
Supplier Device Package: | SM8 |
Base Part Number: | ZDT6757 |
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.A ZDT6757TC is a high-performance dual-gate array, specifically designed for wide dynamic range RF applications requiring both high gain and operation at frequencies up to 1 GHz. It is a versatile component suitable for use in a wide range of RF, cellular and wireless applications, including repeaters, attenuators, amplifiers, filters, mixers and modulators.
The ZDT6757TC is a bipolar junction transistor (BJT) array of four complementary, vertically integrated N- and P- channel metal-oxide semiconductor field-effect transistors (MOSFETs) in one integrated package.
The working principle of a ZDT6757TC is based on the use of BJT transistors as switching devices. The BJT operates with a small current through the base, controlling current between the collector and emitter. This, in turn, operates voltage gain between the emitter and collector, producing an amplified signal. The two MOSFETs in the package work together to create mutually-exclusive complementary output signals, effectively multiplying the gain and efficiency of the device.
The wide gain range of the ZDT6757TC, from DC to 1 GHz, makes it particularly suited for use in a variety of applications. The high 3 dB bandwidth also enables it to be used in wide band amplifiers for various purposes, such as cellular base stations, RF repeaters and wireless communications systems. The device also has high small-signal transimpedance, allowing it to be used in impedance conversion applications as well.
The ZDT6757TC has a good linearity performance and a low noise figure, which makes it well-suited for use in linear amplification applications. The device also has low temperature coefficient, making it ideal for temperature stable systems. Additionally, the ZDT6757TC has low power consumption and a wide operating voltage range, making it ideal for battery operated systems or applications where low power consumption is important.
In conclusion, the ZDT6757TC is a versatile, high-performance integrated dual-gate array for use in RF, cellular and wireless applications. Its wide gain range and linearity, low noise figure, low temperature coefficient and low power consumption make it an ideal solution for many different types of RF applications.
The specific data is subject to PDF, and the above content is for reference
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