ZDT617TA Discrete Semiconductor Products |
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Allicdata Part #: | ZDT617TR-ND |
Manufacturer Part#: |
ZDT617TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN 15V 3A SM8 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 15V 3A... |
DataSheet: | ZDT617TA Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 50mA, 3A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 200mA, 2V |
Power - Max: | 2.5W |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-223-8 |
Supplier Device Package: | SM8 |
Base Part Number: | ZDT617 |
Description
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ZDT617TA Application Field and Working Principle
The ZDT617TA is a transistors - bipolar (BJT) - array device. It offers an array of transistors in one package, which makes it easier for designers to use for their applications. The ZDT617TA offers improved accuracy, speed and reliability compared to single-transistor components. The ZDT617TA can be used for a variety of applications, including: signal processing, power management, communications, automotive, and industrial control. Its transistors allow for superior current gain, providing improved efficiency for applications.Working Principle
The ZDT617TA works by means of a junction-transistor construction, which involves the use of three layers of semiconductor materials. The base material is a P type material and the two collectors are N-type materials. The collector and emitter are formed at the junction between the two N-type layers, while the base is at the junction between the P-type and N-type layers. The ZDT617TA can operate in two different modes, either as a NPN or PNP transistor. Depending on the direction of current flow, the ZDT617TA can amplify a signal or provide switching. In the NPN mode, the transistor operates with a positive base voltage, and in the PNP mode, the transistor operates with a negative voltage on the base.The function of the base and collectors of the transistor is to control the amount of current flowing between the emitter and the collector. When a current flow is induced through the base, it in turn induces a current flow between the collector and the emitter. The ratio between the current flow in the collector to the current flow in the base is known as the current gain of the transistor. The ZDT617TA has a relatively high current gain, which makes it suitable for applications such as signal amplification, power management and switching applications. It also offers several features such as reduced switching noise, stability, high linearity and the ability to handle high current levels.In addition, the ZDT617TA offers improved shorter turn-off times compared to similar devices, which reduces energy consumption. This makes it a great choice for applications that require quick responses, such as automotive and industrial control.Conclusion
The ZDT617TA is a transistors - bipolar (BJT) - array device. Its high current gain, improved accuracy and reliability make it a great choice for signal processing, power management and switching applications. Its improved switching times and reduced noise levels make it a good option for applications that require quick responses such as automotive and industrial control. In addition, its improved linearity makes it suitable for signal amplification applications.The specific data is subject to PDF, and the above content is for reference
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