ZDT6757TA Discrete Semiconductor Products |
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Allicdata Part #: | ZDT6757TR-ND |
Manufacturer Part#: |
ZDT6757TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN/PNP 300V 0.5A SM8 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 300V 500mA... |
DataSheet: | ZDT6757TA Datasheet/PDF |
Quantity: | 1000 |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 5V |
Power - Max: | 2.75W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-223-8 |
Supplier Device Package: | SM8 |
Base Part Number: | ZDT6757 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
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Transistors - Bipolar (BJT) - Arrays: The ZDT6757TA is an array of bipolar junction transistors (BJTs) that offers a wide range of applications. It is a seven-channel device, each channel consisting of a pair of transistors.
The ZDT6757TA is designed to reduce the size and complexity of discrete BJT circuits. It combines the performance of multiple transistors in one package, and is designed for use in many consumer electronics, audio, industrial and automotive applications. The behavior of the transistor can be tuned to match the requirements of the application by changing the bias conditions of the transistor.
The ZDT6757TA package provides the two common collector connections, the two common emitter connections and a gate connection for each channel. These allow for different configurations such as common-emitter, common-collector, and cascades (parallel and series connected). The ZDT6757TA also includes two base terminals for each channel, and two emitters for each channel, giving the user the flexibility to choose the best configuration for the application.
The working principle of the ZDT6757TA is similar to the principle of any other BJT array. The current gain of each channel is determined by the ratio of the base current to the collector current. The current gain of the transistor can be further improved by adding an emitter-base resistor (also called emitter bypassing). The current gain of the transistor can be lowered by decreasing the base current or increasing the collector current, which can be done by controlling the potential applied to the gate (base) of the transistor.
The ZDT6757TA is widely used in analog, power and RF designs. It has greater current carrying capacity, higher frequency operation and wide temperature range. Common applications for the ZDT6757TA include audio amplifiers, voltage regulators, motor and relay controls, audio crossover networks, and high-power switching circuits. The ZDT6757TA is available in plastic packages and surface-mount technology (SMT). The ZDT6757TA is also compatible with other BJT array packages.
In summary, the ZDT6757TA is an array of bipolar junction transistors that offers excellent performance and versatility in a wide variety of applications. It provides high current carrying capacity, high frequency operation and wide temperature range. The ZDT6757TA is available in a variety of packages, allowing for easy integration into different applications. With its wide range of features and benefits, the ZDT6757TA is an ideal choice for a variety of power, audio and RF designs.
The specific data is subject to PDF, and the above content is for reference
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