ZDT649TA Discrete Semiconductor Products |
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Allicdata Part #: | ZDT649TR-ND |
Manufacturer Part#: |
ZDT649TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2NPN 25V 2A SM8 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 25V 2A... |
DataSheet: | ZDT649TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 2V |
Power - Max: | 2.75W |
Frequency - Transition: | 240MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-223-8 |
Supplier Device Package: | SM8 |
Base Part Number: | ZDT649 |
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The ZDT649TA is a Bipolar Junction Transistor (BJT) Array that is used to amplify, isolate and switch electrical signals. It is manufactured by Zetex Semiconductors, which specializes in the fabrication of integrated circuits and semiconductors. The ZDT649TA is primarily used in the industrial sector, but can be applied in other areas as well. It is one of the few available BJT arrays that features a low turn-on voltage and high current capacity, making it a superior choice for many applications.
The ZDT649TA is a three-range BJT array that contains nine transistors mounted in three rows. Its array configuration makes it an ideal choice for switching and amplification of high currents, as the current sourced from each transistor can be independently controlled. In addition, the ZDT649TA also has a low turn-on voltage which eliminates the need for a separate power supply. This is especially useful for applications in harsh environments where additional sources of power can be difficult to access.
The ZDT649TA is a great choice for applications that require the precise and reliable switching and amplification of electrical signals, such as industrial electronics and communications systems. The array configuration allows for the precise control of current sourced from each transistor, making the ZDT649TA ideal for precise switching operations. In addition, the low turn-on voltage and high current capacity of the ZDT649TA make it an ideal choice for applications in harsh environments, such as those in the industrial sector. The nine transistors also allow for the addition of any number of control functions and allow for the precise amplification of input signals, making it an excellent choice for applications requiring precise switching and amplification of electrical signals.
The working principle of the ZDT649TA BJT array is based on the avalanche breakdown of the PN junction diode in the collector-base region of a single N-P-N transistor. In this configuration, when the base region is forward biased, the collector current will drastically increase, thus allowing for the amplification and/or switching of the signal. The amplification and switching capacity of the ZDT649TA is due to the avalanche breakdown which results from electrons colliding with the PN junction that forms the collector-base region. This process releases large amounts of energy that can be used to amplify and/or switch the incoming signal.
The ZDT649TA is an ideal choice for applications where precise switching and amplification of electrical signals is required. The array configuration allows for precise control of each transistor\'s sourced current, while the array\'s low turn-on voltage and high current capacity make it an ideal choice for applications in harsh environments. Additionally, its avalanche breakdown process allows for the precise amplification and switching of input signals, making it an excellent choice for applications where precise switching and amplification of electrical signals is required.
The specific data is subject to PDF, and the above content is for reference
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