ZTX10470ASTOA Allicdata Electronics
Allicdata Part #:

ZTX10470ASTOA-ND

Manufacturer Part#:

ZTX10470ASTOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 10V 4A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 10V 4A 150MHz 1W Thro...
DataSheet: ZTX10470ASTOA datasheetZTX10470ASTOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: 185mV @ 10mA, 3A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Description

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ZTX10470AST is a single-bipolar transistor developed by ZETEX, a leading supplier of discrete semiconductor products. The transistor is a small signal NPN transistor, designed to handle high-frequency applications up to 300 MHz. It has a wide range of integrated features and attractive performance characteristics that make it well suited for analog and digital circuits.

Applications

The ZTX10470AST single-bipolar transistor can be used in various applications such as amplifiers, switching circuits, current sources, and voltage references. It is suitable for use in telecommunications, Ethernet, audio amplifiers, automotive purposes, and other electronic devices. The transistor is also suitable for signal buffering, switching, and power amplifier applications. Additionally, it is commonly used as a general-purpose darlington in circuits that require small signal NPN transistors.

Working principle

The ZTX10470AST transistor works on the principle of hole injection and electron emission. When holes flow in an N-type semiconductor material, electrons are released into the base which creates a voltage potential across the base-emitter junction. This potential forces the electrons to be drawn onto the emitter, creating a current in the forward direction of the circuit. This current is amplified as it passes through the collector-base junction and eventually reaches the collector. In this way, the transistor allows an input signal to be amplified and outputted as required.

Features

The ZTX10470AST transistor boasts a wide range of features that are beneficial in various applications. It offers a high breakdown voltage of 150 volts, a collector-emitter saturation voltage of 0.7V, and a high frequency current gain of 55 dB. Additionally, it has an ultra-low thermal resistance of 1.8K/W, allowing for more efficient temperature management. It also has a maximum operating temperature of 150 degrees Celsius, making it well-suited for applications in harsh environments. Furthermore, it has a high collector current of 10A, making it suitable for use in high-current applications. Finally, the ZTX10470AST transistor has a high gain-bandwidth product, allowing it to produce high levels of amplification with low distortion and noise.

Conclusion

The ZTX10470AST single-bipolar transistor is suitable for a wide range of applications, including audio amplifiers, switching circuits, current sources, and voltage references. It offers a wide range of integrated features and attractive performance characteristics that make it well-suited for analog and digital circuits. The transistor works on the principle of hole injection and electron emission, allowing an input signal to be amplified and outputted as desired. Finally, it offers a high breakdown voltage, a collector-emitter saturation voltage of 0.7V, a high frequency current gain of 55 dB, and an ultra-low thermal resistance. These features make the ZTX10470AST single-bipolar transistor an ideal choice for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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