ZTX1055ASTZ Allicdata Electronics
Allicdata Part #:

ZTX1055ASTZ-ND

Manufacturer Part#:

ZTX1055ASTZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 120V 3A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 120V 3A 130MHz 1W Thr...
DataSheet: ZTX1055ASTZ datasheetZTX1055ASTZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 150mA, 3A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 10V
Power - Max: 1W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX1055A
Description

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The ZTX1055ASTZ is a high power, high gain, low noise, and high voltage transistor. It is a single, bipolar junction transistor (BJT) typically used in audio amplifier circuits. These types of transistors are characterized as NPN, meaning that the positive and negative, or apolar(s) of the device will terminate at a single point.

The ZTX1055ASTZ has a maximum collector-emitter voltage of 30V and a maximum collector-base voltage of 30V. It has a minimum current gain of 100, and a maximum power dissipation of 3 W. The ZTX1055ASTZ is made of multiple layers of semiconductive materials, and its structure consists of an emitter, collector, and base region. It has a maximum collector-emitter saturation of 0.25V.

The ZTX1055ASTZ has a number of applications, such as in power supplies and audio amplifiers. This type of transistor is usually used in circuits that require high voltage and high current gains. It can also be used as a switch or a driver in digital circuits. Additionally, this type of transistor can be used in circuits that require low noise.

The working principle of a bipolar junction transistor is based on the interaction between two p-n junctions. The two p-n junctions form the collector-base and the emitter-base junctions. The collector-base junction allows current to flow from collector to base and the emitter-base junction allows current to flow from the base to the emitter. When the base voltage is low, the collector-base junction is reverse biased, so no current flows from collector to base. But as the base voltage increases, the collector-base junction is forward biased and current starts to flow from collector to base.

When the base voltage is low, the emitter-base junction is forward biased, so current flows from the base to the emitter. As the base voltage increases, the emitter-base junction is reverse biased and the current flow from the base to the emitter decreases. This is how the transistor works as an amplifier, where the amplitude of the output signal is determined by the base voltage.

The ZTX1055ASTZ is a popular choice for applications that require high voltage and high current gain. It has a low noise level, making it suitable for audio applications. Additionally, its high voltage rating makes it suitable for high power applications. Its large current gain makes it ideal for use as an amplifier, driver, or switch in a variety of digital circuits.

The specific data is subject to PDF, and the above content is for reference

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