ZTX1048ASTOA Allicdata Electronics
Allicdata Part #:

ZTX1048ASTOA-ND

Manufacturer Part#:

ZTX1048ASTOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 17.5V 4A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 17.5V 4A 150MHz 1W Th...
DataSheet: ZTX1048ASTOA datasheetZTX1048ASTOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 17.5V
Vce Saturation (Max) @ Ib, Ic: 245mV @ 20mA, 4A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX1048A
Description

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Introduction

The ZTX1048A is an NPN silicon transistor with a low cost and high performance setting it apart from other types of transistors currently available. Its usage range is wide, and has been in development since the mid-1980s. It has been increasingly adopted in the industry due to its low power dissipation and high level of stability. The ZTX1048A has a wide range of applications including high frequency switching and amplifier designs, as well as being used in applications such as oscillators, capacitive coupled amplifiers, and as a series switching device.

Applications

The ZTX1048A has a wide application range due to its low power dissipation, high level of stability, and low cost. It is used for amplification purposes for a wide range of electronic circuits, ranging from audio amplifiers and radios to electronic test equipment, laptops, and industrial projects. It is also used for switching purposes in a range of electronic circuits, ranging from telephones and modems to electronic test equipment, laptop adapters, and industrial applications. The ZTX1048A can also be used in circuits requiring a regulated voltage or current and can be used as a voltage regulator in audio amplifier designs.

Working Principle

The ZTX1048A is an NPN silicon transistor and operates on the principle of active biasing. In NPN transistors, the collector voltage is held at a fixed level, relative to the base voltage, and the current passing through the base is maintained at a constant level. When current is applied to the base, the collector current increases, thus increasing the collector voltage. As the collector voltage increases, the output current will also increase until the voltage reaches the breakdown voltage level. When the input current is removed, the collector current will decrease, thus decreasing the collector voltage back to the original level. The ZTX1048A can also be used in stages to increase the output voltage, if necessary.

Package Options and Characteristics

The ZTX1048A is available in two different packages, the TO-18 and TO-246 packages. The TO-18 package offers a low profile, while the TO-246 package offers a higher performance, but is more expensive. Both packages have the same electrical characteristics, but the TO-246 package has a higher breakdown voltage. The ZTX1048A is a general purpose transistor with a maximum power dissipation of 500 mW, a collector-emitter voltage of 30 V, and a collector-base voltage of 50 V. It has a collector-emitter saturation voltage of 350 mV and a gain-bandwidth product of 10 MHz. The transition frequency is 500 MHz and its breakdown voltage is 100 V.

Conclusion

In conclusion, the ZTX1048A is an NPN silicon transistor with a low cost and high performance. It is used for a wide range of applications, from low power amplifier and switching designs to voltage regulator designs. It is available in two package types, the TO-18 and TO-246, both with the same electrical characteristics. It offers a maximum power dissipation of 500 mW, a collector-emitter voltage of 30 V, and a collector-base voltage of 50 V. It has a collector-emitter saturation voltage of 350 mV and a gain-bandwidth product of 10 MHz. Finally, it has a breakdown voltage of 100 V and a transition frequency of 500 MHz.

The specific data is subject to PDF, and the above content is for reference

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