ZTX1051A Allicdata Electronics
Allicdata Part #:

ZTX1051A-ND

Manufacturer Part#:

ZTX1051A

Price: $ 0.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 40V 4A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 40V 4A 155MHz 1W Thro...
DataSheet: ZTX1051A datasheetZTX1051A Datasheet/PDF
Quantity: 3801
1 +: $ 0.73710
10 +: $ 0.65646
100 +: $ 0.51162
500 +: $ 0.42267
1000 +: $ 0.33368
Stock 3801Can Ship Immediately
$ 0.81
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 4A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 155MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX1051A
Description

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The ZTX1051A transistor is a common type of bipolar transistor found in many electronics devices. It is a single-transistor, NPN type of transistor with a current rating of 500 mA. It is typically used in audio amps, power supplies, and small-signal switching applications. It is a good choice for applications requiring high collector-emitter breakdown voltage and small signal switching.

The ZTX1051A transistor is made of a three-layer material consisting of two semiconductors, Silicon and Germanium, and an insulator, which are used to create a J-FET or junction field-effect transistor. The Silicon layer forms the base, while the Germanium layer forms the emitter and collector. The insulator layer separates the layers and provides the electrical isolation needed. The device is typically mounted onto a printed circuit board.

The ZTX1051A transistor is typically used in applications that require high-speed switching and high breakdown voltage. It can switch very quickly due to its low capacitance, and is able to handle load current up to 500 mA. It has an epoxy encapsulated package designed to dissipate heat quickly and increase its life expectancy.

The ZTX1051A transistor works by utilizing a junction field-effect transistor (JFET) to control current flow in the base region of the device. The base-emitter junction of the transistor can be forward or reverse biased in order to switch between two states. When the base-emitter junction is forward biased, current will flow from the emitter to the collector. This "on" state allows current to be transferred from the collector to the emitter. When the base-emitter junction is reverse biased, current will not flow between the two points and the device is in its "off" state.

The ZTX1051A has a variety of uses in the field of electronics. It is commonly found in audio amplifiers, power supplies, and small signal switching applications. It can be used to control current in electronic circuits, switch between multiple signals, or turn devices on and off with precision. With its fast switching speeds, low power dissipation, and high breakdown voltage, this transistor is an excellent choice for many electronics applications.

The ZTX1051A transistor is an excellent choice for applications requiring high-speed switching and high breakdown voltage. Its fast switching speeds, low power dissipation, and high breakdown voltage make it ideal for many electronics applications. With its epoxy encapsulated package and reliable performance, the ZTX1051A is a great transistor for various applications.

The specific data is subject to PDF, and the above content is for reference

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