ZTX1149ASTOA Allicdata Electronics
Allicdata Part #:

ZTX1149ASTOA-ND

Manufacturer Part#:

ZTX1149ASTOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 25V 3A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 25V 3A 135MHz 1W Thro...
DataSheet: ZTX1149ASTOA datasheetZTX1149ASTOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 135MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX1149A
Description

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ZTX1149A is a single bipolar junction transistor (BJT) used in a variety of applications. The device has become increasingly popular in recent years due to its low cost, high performance and wide variety of applications. It has been used in a variety of applications such as high voltage switching, light sensing, h-bridge motor control, and audio amplificatio

ZTX1149A Structure and Materials

The ZTX1149A consists of a single BJT, which is composed of three doped silicon layers. The base layer of the device is made of heavily n-doped (negative) silicon, which provides the majority of the current from the collector to the base electrode. The collector layer is made of heavily p-doped (positive) silicon, which provides current from the base to the collector electrodes. The emitter layer is made of lightly doped silicon, which provides current from the collector to the emitter electrode. The device is also equipped with a gate, which is used to control the flow of current through the device.

ZTX1149A Working Principle

The ZTX1149A works by utilizing the principle of minority carrier injection. When a small current is passed through the base of the transistor, a base-collector current is established. This current is created by the injection of electrons from the base into the collector. As the collector-base current increases, the base-emitter voltage decreases until it reaches the threshold voltage, at which point the transistor becomes conductive. As current is drawn from the collector, the transistor is further amplified, allowing higher collector-emitter currents.

ZTX1149A Applications

Due to its simple design and single bipolar structure, the ZTX1149A is highly versatile and can be used in a wide variety of applications. It is commonly used in audio amplifiers, h-bridge motor control circuits, and light sensing applications, but it can also be used in high voltage switching, voltage-controlled oscillators, and other types of power conditioning applications. Additionally, the ZTX1149A is also extremely useful for providing low-power driving current for analog and digital signals. This makes it an ideal choice for small-signal processing, test and measurement, and for a variety of other control applications.

Conclusion

The ZTX1149A is a single bipolar junction transistor that is used in many different applications. It is quite simple to use and is highly versatile, making it the perfect choice for a variety of projects. Thanks to its low cost, high performance, and wide variety of applications, the ZTX1149A has become increasingly popular in recent years and is now a key component in many different circuits.

The specific data is subject to PDF, and the above content is for reference

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