ZTX1053ASTZ

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	75V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 100mA, 3A
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1A, 2V
Power - Max:	1W
Frequency - Transition:	140MHz
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)
Base Part Number:	ZTX1053A

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Transistors - Bipolar (BJT) - Single

ZTX1053ASTZ belongs to the Single type of Bipolar Junction Transistors (BJT) which is a solid-state control device using a junction formed by positive and negatively-charge carriers and it is commonly used for switching and amplifying electrical signals. Its main applications include amplifying low-level analog signals, voltage converters and high-current triggering devices.

Device Description

The ZTX1053ASTZ is a high-speed PNP transistor for general use with a maximum power dissipation of 625mW. It is a highly reliable, small-signal transistor with a maximum collector emitter voltage of 60V. Its collector current rating is 1A and its hFE (DC current gain) is 40@25mA. It is through-hole package and leaded type product with 4 DC power supply pins.

Mechanical Details

The dimension of the package is 7.2 mm x 3.3 mm x 5.1 mm and the weight of the package is 1.7 g. The package has an operating temperature range between -55 °C to +175 °C and storage temperature range of -65 °C to +200 °C. For environmental protection the product is RoHS compliant and MSL rating (Moisture Sensitivity Level) is 1.

Working Principle of BJT

A BJT basically consists of three layers. Two layers are called “base” and “emitter”, and the third layer is “collector”. When base-emitter voltage (VBE) reaches certain amount, electrons from the n-layer (emitter) start flowing to the p-layer (base) creating a thin layer of charge carriers across the p-n junction. These charge carriers are called base current (IB). When additional collector-emitter voltage (VCE) is applied, the majority of the charge carriers (collector current, IC) will flow to the collector and the BJT will conduct current generously.

Advantages and Disadvantages of BJT

One of the major advantages of BJT transistors is that they can amplify both ac and dc signals making them appealing to use in a wide variety of electronic circuits. The bipolar transistor can also provide electrical isolation since it operates with positive and negative voltages. BJT is also a very affordable device. Additionally, their relatively small size makes them an ideal choice for many applications. On the other hand, BJT transistors are not suitable for high-frequency applications as the transit time for carriers (holes and electrons) to move from one junction to other is most time-consuming process. BJT devices also have relatively limited power handling capabilities, and their performance is affected by temperature variations. They are also not suitable for applications that requires high input resistance.

Summary

The ZTX1053ASTZ single BJT transistor is a capable device used for amplifying low-level analog signals, voltage converters and high-current triggering devices. It has high-speed characteristics and excellent DC current gain, making it an ideal choice for various electronic projects. Despite their limitations, bipolar junction transistors still remain popular and reliable solution in various electronic applications.

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